Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability
In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and embedded in GlobalFoundries 28 nm bulk high- {k} metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2021-12, Vol.42 (12), p.1774-1777 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1777 |
|---|---|
| container_issue | 12 |
| container_start_page | 1774 |
| container_title | IEEE electron device letters |
| container_volume | 42 |
| creator | Kleimaier, Dominik Mulaosmanovic, Halid Dunkel, Stefan Beyer, Sven Soss, Steven Slesazeck, Stefan Mikolajick, Thomas |
| description | In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and embedded in GlobalFoundries 28 nm bulk high- {k} metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si channel, exhibit a symmetric memory window (MW) and very similar switching behavior, yet profoundly different trapping kinetics. In contrast to n-FeFETs, p-FeFETs display a full MW immediately after the write operation and apparently no parasitic electron trapping. Based on this, we demonstrate an immediate read-after-write operation. Finally, we illustrate how slight structural changes of the gate stack, such as the introduction of the SiGe channel material, can enhance charge trapping and nullify the above-mentioned advantages. |
| doi_str_mv | 10.1109/LED.2021.3118645 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_2601644895</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9562549</ieee_id><sourcerecordid>2601644895</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-3d9ce1311e4475e528631ca30816411a58fba74e4214d5a66b733ec476f5c6ba3</originalsourceid><addsrcrecordid>eNo9kM1LAzEUxIMoWKt3wUvAc2re5mN3j6W1WigIUu0xZLNvMaXbXbPpof-9KS2eHgwz84YfIY_AJwC8fFm9zicZz2AiAAot1RUZgVIF40qLazLiuQQmgOtbcjcMW85BylyOyPcc224_xGCj7_a0a6ilPVsfe6QLDKHDHboYvKOL1zXd-PhDl22LtbcR6Sfamk2biIFtgk_CzPa28jsfj_fkprG7AR8ud0y-UsHsna0-3paz6Yq5rITIRF06hLQY0xqFKiu0AGcFL0BLAKuKprK5RJmBrJXVusqFQCdz3SinKyvG5Pnc24fu94BDNNvuEPbppck0TyWyKFVy8bPLhW4YAjamD7614WiAmxM9k-iZEz1zoZciT-eIR8R_e6l0pmQp_gCxsWlb</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2601644895</pqid></control><display><type>article</type><title>Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability</title><source>IEEE Electronic Library (IEL)</source><creator>Kleimaier, Dominik ; Mulaosmanovic, Halid ; Dunkel, Stefan ; Beyer, Sven ; Soss, Steven ; Slesazeck, Stefan ; Mikolajick, Thomas</creator><creatorcontrib>Kleimaier, Dominik ; Mulaosmanovic, Halid ; Dunkel, Stefan ; Beyer, Sven ; Soss, Steven ; Slesazeck, Stefan ; Mikolajick, Thomas</creatorcontrib><description>In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and embedded in GlobalFoundries 28 nm bulk high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si channel, exhibit a symmetric memory window (MW) and very similar switching behavior, yet profoundly different trapping kinetics. In contrast to n-FeFETs, p-FeFETs display a full MW immediately after the write operation and apparently no parasitic electron trapping. Based on this, we demonstrate an immediate read-after-write operation. Finally, we illustrate how slight structural changes of the gate stack, such as the introduction of the SiGe channel material, can enhance charge trapping and nullify the above-mentioned advantages.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2021.3118645</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge materials ; charge trapping ; Delays ; FeFETs ; Ferroelectric field-effect transistor (FeFET) ; Ferroelectric materials ; ferroelectric memories ; Ferroelectricity ; Field effect transistors ; hafnium oxide ; Kinetic theory ; Logic gates ; n-FeFET ; p-FeFET ; Silicon ; Switches ; Trapping ; Voltage measurement</subject><ispartof>IEEE electron device letters, 2021-12, Vol.42 (12), p.1774-1777</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-3d9ce1311e4475e528631ca30816411a58fba74e4214d5a66b733ec476f5c6ba3</citedby><cites>FETCH-LOGICAL-c291t-3d9ce1311e4475e528631ca30816411a58fba74e4214d5a66b733ec476f5c6ba3</cites><orcidid>0000-0003-3814-0378 ; 0000-0002-0414-0321 ; 0000-0001-6433-6230 ; 0000-0001-9524-5112 ; 0000-0002-7235-6554</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9562549$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9562549$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kleimaier, Dominik</creatorcontrib><creatorcontrib>Mulaosmanovic, Halid</creatorcontrib><creatorcontrib>Dunkel, Stefan</creatorcontrib><creatorcontrib>Beyer, Sven</creatorcontrib><creatorcontrib>Soss, Steven</creatorcontrib><creatorcontrib>Slesazeck, Stefan</creatorcontrib><creatorcontrib>Mikolajick, Thomas</creatorcontrib><title>Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and embedded in GlobalFoundries 28 nm bulk high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si channel, exhibit a symmetric memory window (MW) and very similar switching behavior, yet profoundly different trapping kinetics. In contrast to n-FeFETs, p-FeFETs display a full MW immediately after the write operation and apparently no parasitic electron trapping. Based on this, we demonstrate an immediate read-after-write operation. Finally, we illustrate how slight structural changes of the gate stack, such as the introduction of the SiGe channel material, can enhance charge trapping and nullify the above-mentioned advantages.</description><subject>Charge materials</subject><subject>charge trapping</subject><subject>Delays</subject><subject>FeFETs</subject><subject>Ferroelectric field-effect transistor (FeFET)</subject><subject>Ferroelectric materials</subject><subject>ferroelectric memories</subject><subject>Ferroelectricity</subject><subject>Field effect transistors</subject><subject>hafnium oxide</subject><subject>Kinetic theory</subject><subject>Logic gates</subject><subject>n-FeFET</subject><subject>p-FeFET</subject><subject>Silicon</subject><subject>Switches</subject><subject>Trapping</subject><subject>Voltage measurement</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEUxIMoWKt3wUvAc2re5mN3j6W1WigIUu0xZLNvMaXbXbPpof-9KS2eHgwz84YfIY_AJwC8fFm9zicZz2AiAAot1RUZgVIF40qLazLiuQQmgOtbcjcMW85BylyOyPcc224_xGCj7_a0a6ilPVsfe6QLDKHDHboYvKOL1zXd-PhDl22LtbcR6Sfamk2biIFtgk_CzPa28jsfj_fkprG7AR8ud0y-UsHsna0-3paz6Yq5rITIRF06hLQY0xqFKiu0AGcFL0BLAKuKprK5RJmBrJXVusqFQCdz3SinKyvG5Pnc24fu94BDNNvuEPbppck0TyWyKFVy8bPLhW4YAjamD7614WiAmxM9k-iZEz1zoZciT-eIR8R_e6l0pmQp_gCxsWlb</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Kleimaier, Dominik</creator><creator>Mulaosmanovic, Halid</creator><creator>Dunkel, Stefan</creator><creator>Beyer, Sven</creator><creator>Soss, Steven</creator><creator>Slesazeck, Stefan</creator><creator>Mikolajick, Thomas</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3814-0378</orcidid><orcidid>https://orcid.org/0000-0002-0414-0321</orcidid><orcidid>https://orcid.org/0000-0001-6433-6230</orcidid><orcidid>https://orcid.org/0000-0001-9524-5112</orcidid><orcidid>https://orcid.org/0000-0002-7235-6554</orcidid></search><sort><creationdate>20211201</creationdate><title>Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability</title><author>Kleimaier, Dominik ; Mulaosmanovic, Halid ; Dunkel, Stefan ; Beyer, Sven ; Soss, Steven ; Slesazeck, Stefan ; Mikolajick, Thomas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-3d9ce1311e4475e528631ca30816411a58fba74e4214d5a66b733ec476f5c6ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Charge materials</topic><topic>charge trapping</topic><topic>Delays</topic><topic>FeFETs</topic><topic>Ferroelectric field-effect transistor (FeFET)</topic><topic>Ferroelectric materials</topic><topic>ferroelectric memories</topic><topic>Ferroelectricity</topic><topic>Field effect transistors</topic><topic>hafnium oxide</topic><topic>Kinetic theory</topic><topic>Logic gates</topic><topic>n-FeFET</topic><topic>p-FeFET</topic><topic>Silicon</topic><topic>Switches</topic><topic>Trapping</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kleimaier, Dominik</creatorcontrib><creatorcontrib>Mulaosmanovic, Halid</creatorcontrib><creatorcontrib>Dunkel, Stefan</creatorcontrib><creatorcontrib>Beyer, Sven</creatorcontrib><creatorcontrib>Soss, Steven</creatorcontrib><creatorcontrib>Slesazeck, Stefan</creatorcontrib><creatorcontrib>Mikolajick, Thomas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kleimaier, Dominik</au><au>Mulaosmanovic, Halid</au><au>Dunkel, Stefan</au><au>Beyer, Sven</au><au>Soss, Steven</au><au>Slesazeck, Stefan</au><au>Mikolajick, Thomas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>42</volume><issue>12</issue><spage>1774</spage><epage>1777</epage><pages>1774-1777</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, p-type ferroelectric field-effect-transistors (FeFETs) based on HfO 2 and embedded in GlobalFoundries 28 nm bulk high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> metal gate (HKMG) technology (28SLPe) are systematically investigated and compared to their n-type counterparts. We show that the two device types, based on Si channel, exhibit a symmetric memory window (MW) and very similar switching behavior, yet profoundly different trapping kinetics. In contrast to n-FeFETs, p-FeFETs display a full MW immediately after the write operation and apparently no parasitic electron trapping. Based on this, we demonstrate an immediate read-after-write operation. Finally, we illustrate how slight structural changes of the gate stack, such as the introduction of the SiGe channel material, can enhance charge trapping and nullify the above-mentioned advantages.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2021.3118645</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-3814-0378</orcidid><orcidid>https://orcid.org/0000-0002-0414-0321</orcidid><orcidid>https://orcid.org/0000-0001-6433-6230</orcidid><orcidid>https://orcid.org/0000-0001-9524-5112</orcidid><orcidid>https://orcid.org/0000-0002-7235-6554</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2021-12, Vol.42 (12), p.1774-1777 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_2601644895 |
| source | IEEE Electronic Library (IEL) |
| subjects | Charge materials charge trapping Delays FeFETs Ferroelectric field-effect transistor (FeFET) Ferroelectric materials ferroelectric memories Ferroelectricity Field effect transistors hafnium oxide Kinetic theory Logic gates n-FeFET p-FeFET Silicon Switches Trapping Voltage measurement |
| title | Demonstration of a p-Type Ferroelectric FET With Immediate Read-After-Write Capability |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T06%3A31%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Demonstration%20of%20a%20p-Type%20Ferroelectric%20FET%20With%20Immediate%20Read-After-Write%20Capability&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Kleimaier,%20Dominik&rft.date=2021-12-01&rft.volume=42&rft.issue=12&rft.spage=1774&rft.epage=1777&rft.pages=1774-1777&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2021.3118645&rft_dat=%3Cproquest_RIE%3E2601644895%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2601644895&rft_id=info:pmid/&rft_ieee_id=9562549&rfr_iscdi=true |