High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

[Display omitted] •The monocrystalline GaN on polycrystalline diamond is successfully obtained.•The h-BN layer is used to alleviate the mismatch between GaN and diamond.•The full width at half maximum of (002) plane of GaN is as low as 1.20°. The single crystal GaN film was successfully grown on the...

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