High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

[Display omitted] •The monocrystalline GaN on polycrystalline diamond is successfully obtained.•The h-BN layer is used to alleviate the mismatch between GaN and diamond.•The full width at half maximum of (002) plane of GaN is as low as 1.20°. The single crystal GaN film was successfully grown on the...

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Veröffentlicht in:Materials letters 2021-12, Vol.305, p.130806, Article 130806
Hauptverfasser: Xu, Wenqiang, Xu, Shengrui, Tao, Hongchang, Gao, Yuan, Fan, Xiaomeng, Du, Jinjuan, Ai, Lixia, Peng, Liping, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue
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container_issue
container_start_page 130806
container_title Materials letters
container_volume 305
creator Xu, Wenqiang
Xu, Shengrui
Tao, Hongchang
Gao, Yuan
Fan, Xiaomeng
Du, Jinjuan
Ai, Lixia
Peng, Liping
Zhang, Jinfeng
Zhang, Jincheng
Hao, Yue
description [Display omitted] •The monocrystalline GaN on polycrystalline diamond is successfully obtained.•The h-BN layer is used to alleviate the mismatch between GaN and diamond.•The full width at half maximum of (002) plane of GaN is as low as 1.20°. The single crystal GaN film was successfully grown on the polycrystalline diamond substrate using a h-BN insertion layer by metal–organic chemical vapor deposition, which solved the problem that GaN and diamond are difficult to combine due to the lattice and thermal mismatch. After using h-BN and optimizing the growth process of AlN nucleation layer, the full width at half maximum value of (002) plane of GaN is decreased from 4.67° to 1.20°. The root mean square roughness is decreased from 31.5 nm to 1.07 nm, and the yellow luminescence caused by carbon impurity is obviously suppressed. The successful preparation of single crystal GaN film on polycrystalline diamond provides a new solution for the heat dissipation problem, which has plagued the development of GaN-based power devices for a long time.
doi_str_mv 10.1016/j.matlet.2021.130806
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The single crystal GaN film was successfully grown on the polycrystalline diamond substrate using a h-BN insertion layer by metal–organic chemical vapor deposition, which solved the problem that GaN and diamond are difficult to combine due to the lattice and thermal mismatch. After using h-BN and optimizing the growth process of AlN nucleation layer, the full width at half maximum value of (002) plane of GaN is decreased from 4.67° to 1.20°. The root mean square roughness is decreased from 31.5 nm to 1.07 nm, and the yellow luminescence caused by carbon impurity is obviously suppressed. 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The single crystal GaN film was successfully grown on the polycrystalline diamond substrate using a h-BN insertion layer by metal–organic chemical vapor deposition, which solved the problem that GaN and diamond are difficult to combine due to the lattice and thermal mismatch. After using h-BN and optimizing the growth process of AlN nucleation layer, the full width at half maximum value of (002) plane of GaN is decreased from 4.67° to 1.20°. The root mean square roughness is decreased from 31.5 nm to 1.07 nm, and the yellow luminescence caused by carbon impurity is obviously suppressed. The successful preparation of single crystal GaN film on polycrystalline diamond provides a new solution for the heat dissipation problem, which has plagued the development of GaN-based power devices for a long time.</description><subject>Diamond films</subject><subject>Electronic devices</subject><subject>Epitaxial growth</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Insertion</subject><subject>Materials science</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Nucleation</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Polycrystalline diamond</subject><subject>Polycrystals</subject><subject>Semiconductors</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Thermal mismatch</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwDxgsMaecP5rECxIUaJFKuwBiM67ttI7SpNguVf49qcLMcLrlfd7TPQhdExgRIOltOdqqWNk4okDJiDDIIT1BA5JnLOEiE6do0MWyZJxln-foIoQSALgAPkBfM7fe4O-9qlxs8VQt8No3hxo3Nd41Vat9G6KqKldbbJzaNrXBYb8K0atoAz64uMGb5GGBXR2sj67DKtVaH_Cqxa_LycfjJTorVBXs1d8eovfnp7fJLJkvpy-T-3miGeMxMQUTwgjFNNEmZ1ppxleZAVJYQzjwXHCaA6FqRbmFTJtuBANLgdM0NYoN0U3fu_PN996GKMtm7-vupKQpABtTQXmX4n1K-yYEbwu5826rfCsJyKNLWcrepTy6lL3LDrvrMdt98OOsl0E7W2trnLc6StO4_wt-AfsTfvY</recordid><startdate>20211215</startdate><enddate>20211215</enddate><creator>Xu, Wenqiang</creator><creator>Xu, Shengrui</creator><creator>Tao, Hongchang</creator><creator>Gao, Yuan</creator><creator>Fan, Xiaomeng</creator><creator>Du, Jinjuan</creator><creator>Ai, Lixia</creator><creator>Peng, Liping</creator><creator>Zhang, Jinfeng</creator><creator>Zhang, Jincheng</creator><creator>Hao, Yue</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20211215</creationdate><title>High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD</title><author>Xu, Wenqiang ; Xu, Shengrui ; Tao, Hongchang ; Gao, Yuan ; Fan, Xiaomeng ; Du, Jinjuan ; Ai, Lixia ; Peng, Liping ; Zhang, Jinfeng ; Zhang, Jincheng ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c334t-df399d9a3c1cd83cac34b7d01fed140489428012ab24e07cd07c930e204266da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Diamond films</topic><topic>Electronic devices</topic><topic>Epitaxial growth</topic><topic>Gallium nitrides</topic><topic>GaN</topic><topic>Insertion</topic><topic>Materials science</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Nucleation</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Polycrystalline diamond</topic><topic>Polycrystals</topic><topic>Semiconductors</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Thermal mismatch</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Wenqiang</creatorcontrib><creatorcontrib>Xu, Shengrui</creatorcontrib><creatorcontrib>Tao, Hongchang</creatorcontrib><creatorcontrib>Gao, Yuan</creatorcontrib><creatorcontrib>Fan, Xiaomeng</creatorcontrib><creatorcontrib>Du, Jinjuan</creatorcontrib><creatorcontrib>Ai, Lixia</creatorcontrib><creatorcontrib>Peng, Liping</creatorcontrib><creatorcontrib>Zhang, Jinfeng</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xu, Wenqiang</au><au>Xu, Shengrui</au><au>Tao, Hongchang</au><au>Gao, Yuan</au><au>Fan, Xiaomeng</au><au>Du, Jinjuan</au><au>Ai, Lixia</au><au>Peng, Liping</au><au>Zhang, Jinfeng</au><au>Zhang, Jincheng</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD</atitle><jtitle>Materials letters</jtitle><date>2021-12-15</date><risdate>2021</risdate><volume>305</volume><spage>130806</spage><pages>130806-</pages><artnum>130806</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>[Display omitted] •The monocrystalline GaN on polycrystalline diamond is successfully obtained.•The h-BN layer is used to alleviate the mismatch between GaN and diamond.•The full width at half maximum of (002) plane of GaN is as low as 1.20°. The single crystal GaN film was successfully grown on the polycrystalline diamond substrate using a h-BN insertion layer by metal–organic chemical vapor deposition, which solved the problem that GaN and diamond are difficult to combine due to the lattice and thermal mismatch. After using h-BN and optimizing the growth process of AlN nucleation layer, the full width at half maximum value of (002) plane of GaN is decreased from 4.67° to 1.20°. The root mean square roughness is decreased from 31.5 nm to 1.07 nm, and the yellow luminescence caused by carbon impurity is obviously suppressed. The successful preparation of single crystal GaN film on polycrystalline diamond provides a new solution for the heat dissipation problem, which has plagued the development of GaN-based power devices for a long time.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2021.130806</doi></addata></record>
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subjects Diamond films
Electronic devices
Epitaxial growth
Gallium nitrides
GaN
Insertion
Materials science
Metalorganic chemical vapor deposition
Nucleation
Organic chemicals
Organic chemistry
Polycrystalline diamond
Polycrystals
Semiconductors
Single crystals
Substrates
Thermal mismatch
title High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD
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