A novel passivating electron contact for high-performance silicon solar cells by ALD Al-doped TiO2
•Investigate the electronic band structure, the structural film, analysis of elements, passivation, conductivity and optical properties of atomic layers deposition (ALD) Al doping TiO2 (ATO) thin films.•Simultaneously achieve an ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a l...
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| Veröffentlicht in: | Solar energy 2021-11, Vol.228, p.531-539 |
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| creator | Liu, Ying Sang, Borong Hossain, Md. Anower Gao, Kun Cheng, Hao Song, Xiaomin Zhong, Sihua Shi, Linxing Shen, Wenzhong Hoex, Bram Huang, Zengguang |
| description | •Investigate the electronic band structure, the structural film, analysis of elements, passivation, conductivity and optical properties of atomic layers deposition (ALD) Al doping TiO2 (ATO) thin films.•Simultaneously achieve an ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2.•Find that ATO thin films possess better electron-selective performance and thermal stability than the TiO2 thin films.•Achieve a champion efficiency of 21.4%, with a VOC of 0.679 V, JSC of 39.20 mA·cm−2, FF of 80.51%, and RS of 3.888 mΩ.
Titanium oxide (TiO2) thin film has attracted wide interest in high-efficiency silicon solar cells as an electron selective contact due to its low conduction band offset with silicon and an excellent level of passivation, while the incorporation of a small amount of dopants is also expected to improve the performance of thin films. In this work, assisted with density functional theory (DFT) modelling, we study the electronic band structure of aluminum (Al)-doped TiO2 (ATO). The atomic-layer-deposited (ALD) ATO thin films are successfully prepared, and the elemental analysis, passivation effect, thermal stability, conductivity and optical properties of the ATO are systematically investigated. An ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2 are simultaneously achieved on silicon wafers. Meanwhile, it is found that the ATO thin films possess better thermal stability than the TiO2 thin film. Finally, a large-area (118.7 × 100 mm2) p-type passivated emitter and rear contact (PERC) solar cells integrated with an ALD ATO layer on the illumination side was fabricated, and a champion efficiency of 21.4% was achieved with an optimal Al concentration in ATO, which is significantly higher than a PERC solar cell with intrinsic TiO2. This work shows ATO a very attractive alternative achieving high-efficiency crystalline silicon solar cells. |
| doi_str_mv | 10.1016/j.solener.2021.09.083 |
| format | Article |
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Titanium oxide (TiO2) thin film has attracted wide interest in high-efficiency silicon solar cells as an electron selective contact due to its low conduction band offset with silicon and an excellent level of passivation, while the incorporation of a small amount of dopants is also expected to improve the performance of thin films. In this work, assisted with density functional theory (DFT) modelling, we study the electronic band structure of aluminum (Al)-doped TiO2 (ATO). The atomic-layer-deposited (ALD) ATO thin films are successfully prepared, and the elemental analysis, passivation effect, thermal stability, conductivity and optical properties of the ATO are systematically investigated. An ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2 are simultaneously achieved on silicon wafers. Meanwhile, it is found that the ATO thin films possess better thermal stability than the TiO2 thin film. Finally, a large-area (118.7 × 100 mm2) p-type passivated emitter and rear contact (PERC) solar cells integrated with an ALD ATO layer on the illumination side was fabricated, and a champion efficiency of 21.4% was achieved with an optimal Al concentration in ATO, which is significantly higher than a PERC solar cell with intrinsic TiO2. This work shows ATO a very attractive alternative achieving high-efficiency crystalline silicon solar cells.</description><identifier>ISSN: 0038-092X</identifier><identifier>EISSN: 1471-1257</identifier><identifier>DOI: 10.1016/j.solener.2021.09.083</identifier><language>eng</language><publisher>New York: Elsevier Ltd</publisher><subject>Aluminum ; Atomic layer deposition ; Atomic layer epitaxy ; Carrier lifetime ; Conduction bands ; Conductivity ; Density functional theory ; Efficiency ; Emitters ; High-performance solar cells ; Minority carriers ; Optical properties ; Passivated contact ; Passivation ; Passivity ; Performance enhancement ; Photovoltaic cells ; Silicon ; Silicon wafers ; Solar cells ; Solar energy ; Stability analysis ; Thermal stability ; Thin films ; Titanium dioxide ; Titanium oxide ; Titanium oxides</subject><ispartof>Solar energy, 2021-11, Vol.228, p.531-539</ispartof><rights>2021 International Solar Energy Society</rights><rights>Copyright Pergamon Press Inc. Nov 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-2f25c36de75424bff516abc9bc941dbce7e8ea2d1bd411cfccf20d7538444e7f3</citedby><cites>FETCH-LOGICAL-c337t-2f25c36de75424bff516abc9bc941dbce7e8ea2d1bd411cfccf20d7538444e7f3</cites><orcidid>0000-0002-8256-4322 ; 0000-0001-9903-3504 ; 0000-0002-5312-1995</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038092X21008501$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids></links><search><creatorcontrib>Liu, Ying</creatorcontrib><creatorcontrib>Sang, Borong</creatorcontrib><creatorcontrib>Hossain, Md. Anower</creatorcontrib><creatorcontrib>Gao, Kun</creatorcontrib><creatorcontrib>Cheng, Hao</creatorcontrib><creatorcontrib>Song, Xiaomin</creatorcontrib><creatorcontrib>Zhong, Sihua</creatorcontrib><creatorcontrib>Shi, Linxing</creatorcontrib><creatorcontrib>Shen, Wenzhong</creatorcontrib><creatorcontrib>Hoex, Bram</creatorcontrib><creatorcontrib>Huang, Zengguang</creatorcontrib><title>A novel passivating electron contact for high-performance silicon solar cells by ALD Al-doped TiO2</title><title>Solar energy</title><description>•Investigate the electronic band structure, the structural film, analysis of elements, passivation, conductivity and optical properties of atomic layers deposition (ALD) Al doping TiO2 (ATO) thin films.•Simultaneously achieve an ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2.•Find that ATO thin films possess better electron-selective performance and thermal stability than the TiO2 thin films.•Achieve a champion efficiency of 21.4%, with a VOC of 0.679 V, JSC of 39.20 mA·cm−2, FF of 80.51%, and RS of 3.888 mΩ.
Titanium oxide (TiO2) thin film has attracted wide interest in high-efficiency silicon solar cells as an electron selective contact due to its low conduction band offset with silicon and an excellent level of passivation, while the incorporation of a small amount of dopants is also expected to improve the performance of thin films. In this work, assisted with density functional theory (DFT) modelling, we study the electronic band structure of aluminum (Al)-doped TiO2 (ATO). The atomic-layer-deposited (ALD) ATO thin films are successfully prepared, and the elemental analysis, passivation effect, thermal stability, conductivity and optical properties of the ATO are systematically investigated. An ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2 are simultaneously achieved on silicon wafers. Meanwhile, it is found that the ATO thin films possess better thermal stability than the TiO2 thin film. Finally, a large-area (118.7 × 100 mm2) p-type passivated emitter and rear contact (PERC) solar cells integrated with an ALD ATO layer on the illumination side was fabricated, and a champion efficiency of 21.4% was achieved with an optimal Al concentration in ATO, which is significantly higher than a PERC solar cell with intrinsic TiO2. This work shows ATO a very attractive alternative achieving high-efficiency crystalline silicon solar cells.</description><subject>Aluminum</subject><subject>Atomic layer deposition</subject><subject>Atomic layer epitaxy</subject><subject>Carrier lifetime</subject><subject>Conduction bands</subject><subject>Conductivity</subject><subject>Density functional theory</subject><subject>Efficiency</subject><subject>Emitters</subject><subject>High-performance solar cells</subject><subject>Minority carriers</subject><subject>Optical properties</subject><subject>Passivated contact</subject><subject>Passivation</subject><subject>Passivity</subject><subject>Performance enhancement</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>Silicon wafers</subject><subject>Solar cells</subject><subject>Solar energy</subject><subject>Stability analysis</subject><subject>Thermal stability</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><subject>Titanium oxide</subject><subject>Titanium oxides</subject><issn>0038-092X</issn><issn>1471-1257</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkMtqwzAQRUVpoWnaTygIurYryQ_Zq2LSJwSySaE7IUujRMaxXMkJ5O-rkOwLAzMw985lDkKPlKSU0PK5S4PrYQCfMsJoSuqUVNkVmtGc04Sygl-jGSFZlZCa_dyiuxA6QiinFZ-htsGDO0CPRxmCPcjJDhsMPajJuwErN0xSTdg4j7d2s01G8HHeyUEBDra3UYBjuPRYQd8H3B5xs3zFTZ9oN4LGa7ti9-jGyD7Aw6XP0ff723rxmSxXH1-LZpmoLONTwgwrVFZq4EXO8taYgpayVXWsnOpWAYcKJNO01TmlyihlGNG8yKo8z4GbbI6ezndH7373ECbRub0fYqRgRV2XWcFoGVXFWaW8C8GDEaO3O-mPghJxwik6ccEpTjgFqUXEGX0vZx_EFw42boOyEDlo6yMtoZ3958IfKi2CDQ</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Liu, Ying</creator><creator>Sang, Borong</creator><creator>Hossain, Md. Anower</creator><creator>Gao, Kun</creator><creator>Cheng, Hao</creator><creator>Song, Xiaomin</creator><creator>Zhong, Sihua</creator><creator>Shi, Linxing</creator><creator>Shen, Wenzhong</creator><creator>Hoex, Bram</creator><creator>Huang, Zengguang</creator><general>Elsevier Ltd</general><general>Pergamon Press Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7ST</scope><scope>8FD</scope><scope>C1K</scope><scope>FR3</scope><scope>KR7</scope><scope>L7M</scope><scope>SOI</scope><orcidid>https://orcid.org/0000-0002-8256-4322</orcidid><orcidid>https://orcid.org/0000-0001-9903-3504</orcidid><orcidid>https://orcid.org/0000-0002-5312-1995</orcidid></search><sort><creationdate>20211101</creationdate><title>A novel passivating electron contact for high-performance silicon solar cells by ALD Al-doped TiO2</title><author>Liu, Ying ; Sang, Borong ; Hossain, Md. Anower ; Gao, Kun ; Cheng, Hao ; Song, Xiaomin ; Zhong, Sihua ; Shi, Linxing ; Shen, Wenzhong ; Hoex, Bram ; Huang, Zengguang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-2f25c36de75424bff516abc9bc941dbce7e8ea2d1bd411cfccf20d7538444e7f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum</topic><topic>Atomic layer deposition</topic><topic>Atomic layer epitaxy</topic><topic>Carrier lifetime</topic><topic>Conduction bands</topic><topic>Conductivity</topic><topic>Density functional theory</topic><topic>Efficiency</topic><topic>Emitters</topic><topic>High-performance solar cells</topic><topic>Minority carriers</topic><topic>Optical properties</topic><topic>Passivated contact</topic><topic>Passivation</topic><topic>Passivity</topic><topic>Performance enhancement</topic><topic>Photovoltaic cells</topic><topic>Silicon</topic><topic>Silicon wafers</topic><topic>Solar cells</topic><topic>Solar energy</topic><topic>Stability analysis</topic><topic>Thermal stability</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><topic>Titanium oxide</topic><topic>Titanium oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Ying</creatorcontrib><creatorcontrib>Sang, Borong</creatorcontrib><creatorcontrib>Hossain, Md. Anower</creatorcontrib><creatorcontrib>Gao, Kun</creatorcontrib><creatorcontrib>Cheng, Hao</creatorcontrib><creatorcontrib>Song, Xiaomin</creatorcontrib><creatorcontrib>Zhong, Sihua</creatorcontrib><creatorcontrib>Shi, Linxing</creatorcontrib><creatorcontrib>Shen, Wenzhong</creatorcontrib><creatorcontrib>Hoex, Bram</creatorcontrib><creatorcontrib>Huang, Zengguang</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Environment Abstracts</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Environment Abstracts</collection><jtitle>Solar energy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Ying</au><au>Sang, Borong</au><au>Hossain, Md. Anower</au><au>Gao, Kun</au><au>Cheng, Hao</au><au>Song, Xiaomin</au><au>Zhong, Sihua</au><au>Shi, Linxing</au><au>Shen, Wenzhong</au><au>Hoex, Bram</au><au>Huang, Zengguang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel passivating electron contact for high-performance silicon solar cells by ALD Al-doped TiO2</atitle><jtitle>Solar energy</jtitle><date>2021-11-01</date><risdate>2021</risdate><volume>228</volume><spage>531</spage><epage>539</epage><pages>531-539</pages><issn>0038-092X</issn><eissn>1471-1257</eissn><abstract>•Investigate the electronic band structure, the structural film, analysis of elements, passivation, conductivity and optical properties of atomic layers deposition (ALD) Al doping TiO2 (ATO) thin films.•Simultaneously achieve an ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2.•Find that ATO thin films possess better electron-selective performance and thermal stability than the TiO2 thin films.•Achieve a champion efficiency of 21.4%, with a VOC of 0.679 V, JSC of 39.20 mA·cm−2, FF of 80.51%, and RS of 3.888 mΩ.
Titanium oxide (TiO2) thin film has attracted wide interest in high-efficiency silicon solar cells as an electron selective contact due to its low conduction band offset with silicon and an excellent level of passivation, while the incorporation of a small amount of dopants is also expected to improve the performance of thin films. In this work, assisted with density functional theory (DFT) modelling, we study the electronic band structure of aluminum (Al)-doped TiO2 (ATO). The atomic-layer-deposited (ALD) ATO thin films are successfully prepared, and the elemental analysis, passivation effect, thermal stability, conductivity and optical properties of the ATO are systematically investigated. An ultra-high effective minority carrier lifetime (τeff) of 1.9 ms and a low contact resistivity (ρc) of 0.1 Ω·cm2 are simultaneously achieved on silicon wafers. Meanwhile, it is found that the ATO thin films possess better thermal stability than the TiO2 thin film. Finally, a large-area (118.7 × 100 mm2) p-type passivated emitter and rear contact (PERC) solar cells integrated with an ALD ATO layer on the illumination side was fabricated, and a champion efficiency of 21.4% was achieved with an optimal Al concentration in ATO, which is significantly higher than a PERC solar cell with intrinsic TiO2. This work shows ATO a very attractive alternative achieving high-efficiency crystalline silicon solar cells.</abstract><cop>New York</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.solener.2021.09.083</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-8256-4322</orcidid><orcidid>https://orcid.org/0000-0001-9903-3504</orcidid><orcidid>https://orcid.org/0000-0002-5312-1995</orcidid></addata></record> |
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| subjects | Aluminum Atomic layer deposition Atomic layer epitaxy Carrier lifetime Conduction bands Conductivity Density functional theory Efficiency Emitters High-performance solar cells Minority carriers Optical properties Passivated contact Passivation Passivity Performance enhancement Photovoltaic cells Silicon Silicon wafers Solar cells Solar energy Stability analysis Thermal stability Thin films Titanium dioxide Titanium oxide Titanium oxides |
| title | A novel passivating electron contact for high-performance silicon solar cells by ALD Al-doped TiO2 |
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