Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode

A n-4H SiC based diode is fabricated by an Au front metal contact to provide rectification at the metal-semiconductor (MS) junction, and a back ohmic contact is also obtained using Au metal with post-thermal heating. MS diode characteristics are investigated by current–voltage ( I - V ) measurements...

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Veröffentlicht in:	Journal of electronic materials 2021-12, Vol.50 (12), p.7044-7056
Hauptverfasser:	Gullu, H. H., Seme Sirin, D., Yıldız, D. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Characterization and Evaluation of Materials Chemistry and Materials Science Conduction model Contact resistance Electric contacts Electric fields Electronics and Microelectronics Emission analysis Gold Inhomogeneity Instrumentation Linearity Low temperature Materials Science Normal distribution Ohm's Law Optical and Electronic Materials Original Research Article Room temperature Schottky diodes Solid State Physics Temperature Thermionic emission
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