Engineering Cu2ZnSnS4 grain boundaries for enhanced photovoltage generation at the Cu2ZnSnS4/TiO2 heterojunction: A nanoscale investigation using Kelvin probe force microscopy

Over the past several years, kesterite Cu2ZnSnS4 (CZTS) absorber has been investigated comprehensively; however, the performance is still hampered by a large open-circuit voltage deficit associated with CZTS bulk defects and interface recombination. To overcome this trend, we report a facile approac...

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Veröffentlicht in:	Journal of applied physics 2021-11, Vol.130 (13)
Hauptverfasser:	Nisika, Ghosh Anupam, Kaur Kulwinder, Bobba, Raja Sekhar, Quinn, Qiao, Kumar, Mukesh
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorbers Applied physics Buffer layers Carrier recombination Carrier transport Crystal defects Dark current Electrical measurement Electrical properties Electronic properties Enhanced diffusion Grain boundaries Heterojunctions Microscopy Open circuit voltage Oxygen Titanium dioxide
Online-Zugang:	Volltext
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