Influence of laser energy in CdS/PSi solar cell

In this paper, cadmium oxide (n-CdS) deposited on porous Si substrates from p-type by pulse laser induced plasma (PLIP). n-CdS/p-PSi heterojunction. Nd: AYG laser has been utilized in PLD system with wavelength of 1064 nm at different laser energies from 220 mJ to 520 mJ with increment of 100 mJ in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Mutar, Shihab Ahmed
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, cadmium oxide (n-CdS) deposited on porous Si substrates from p-type by pulse laser induced plasma (PLIP). n-CdS/p-PSi heterojunction. Nd: AYG laser has been utilized in PLD system with wavelength of 1064 nm at different laser energies from 220 mJ to 520 mJ with increment of 100 mJ in each sample. The number of laser pulses has been set constant 100 pulses in each step.solar cell measurement has been studied by J-V characteristics for the back and front contacts. As we note that the laser energy increases from 220 to 520, the solar cell efficiency value increases from 1.55 to 3.4.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0068744