Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@HfO2/n-Si Schottky barrier diodes

[Display omitted] •A nanostructured Zn@HfO2 thin films were through the JNSP technique.•The mesoporous with irregular balls intact nanorods-like structured morphology was observed by FESEM images.•The band gap values are receded continuously after doping.•We have fabricated Al/Zn@HfO2/n-Si diode for...

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Veröffentlicht in:Sensors and actuators. A. Physical. 2021-11, Vol.331, p.112725, Article 112725
Hauptverfasser: Harishsenthil, P., Chandrasekaran, J., Marnadu, R., Balasubramani, V.
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Sprache:eng
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