Development of a front-end electronics for thin-gap resistive plate chamber
To cope with the challenge of high hit rates in some applications, the new-generation large-area Resistive Plate Chamber (RPC) with 1 mm thin gap was proposed. Compared to the RPC generation presently, the signal of the thin-gap RPC is much weaker (of the order of hundreds of μV) and faster (pulse w...
Gespeichert in:
| Veröffentlicht in: | Journal of instrumentation 2021-11, Vol.16 (11), p.T11004 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 11 |
| container_start_page | T11004 |
| container_title | Journal of instrumentation |
| container_volume | 16 |
| creator | Ge, J.J. Li, Q.Y. Su, C. Xue, Z.W. Liu, Y.W. Sun, Y.J. Liang, H. |
| description | To cope with the challenge of high hit rates in some
applications, the new-generation large-area Resistive Plate Chamber
(RPC) with 1 mm thin gap was proposed. Compared to the RPC
generation presently, the signal of the thin-gap RPC is much weaker
(of the order of hundreds of μV) and faster (pulse width of about
5 ns). Hence a new-generation Front-End (FE) electronics needs to
be developed for the thin-gap RPC. The FE board contains 8
independent electronic channels, each with an amplifier, a
discriminator, and a Low-Voltage Differential Signaling (LVDS)
transmitter. The amplifier is made of discrete components, with
particular emphasis on SiGe:C transistors. A simplified but stable
power system is designed for the FE board, and its status can be
monitored in real-time. The test results show that the overall
charge gain of the FE amplifier reaches 0.4 mV/fC, with very low
noise (lower than 700 μV RMS with up to 10 pF input detector
capacitance), and good linearity when the amplitude of the input
amplitude is lower than 3 mV. The -3-dB bandwidth of the
amplifier reaches 154 MHz. The jitter caused by the electronics
(including amplifier, discriminator and LVDS transmitter) is around
10 ps when the threshold voltage is higher than 20 mV. The maximum
event rate per channel exceeds 20 MHz. The cosmic ray test was
conducted with two FE boards mounted on a 1 mm thin-gap RPC of
1.4 × 0.4 m
2
area. The efficiency of the detector system
reaches 95% when the threshold voltage is 20 mV, with almost no
accidental coincidence event. The overall time resolution of the
detector system is 484 ps. The performance of our FE electronics
satisfies the requirement of the thin-gap RPC. |
| doi_str_mv | 10.1088/1748-0221/16/11/T11004 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_journals_2595151484</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2595151484</sourcerecordid><originalsourceid>FETCH-LOGICAL-c361t-5a50f22e16096dbd49331ce2d6eae75c6d085abf1279ed27bed6829b29ec261a3</originalsourceid><addsrcrecordid>eNqFkE9LxDAQxYMouK5-BQl4E-pm0jZtj7L-xQUv6zmkycTt0m1qkl3w29ulonsQPM0M83vzmEfIJbAbYGU5gyIrE8Y5zEDMAGZLAMayIzL5WRwf9KfkLIQ1Y3mVZ2xCXu5wh63rN9hF6ixV1HrXxQQ7Q7FFHYep0YFa52lcNV3yrnrqMTQhNjukfasiUr1Smxr9OTmxqg148V2n5O3hfjl_Shavj8_z20WiUwExyVXOLOcIglXC1Car0hQ0ciNQYZFrYViZq9oCLyo0vKjRiJJXNa9QcwEqnZKr8W7v3ccWQ5Rrt_XdYCn58BbkkJXZQImR0t6F4NHK3jcb5T8lMLkPTu4zkftMJAgJIMfgBuH1KGxc_3t53XSD0SEoe2MHmP8B_-PwBRViff4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2595151484</pqid></control><display><type>article</type><title>Development of a front-end electronics for thin-gap resistive plate chamber</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Ge, J.J. ; Li, Q.Y. ; Su, C. ; Xue, Z.W. ; Liu, Y.W. ; Sun, Y.J. ; Liang, H.</creator><creatorcontrib>Ge, J.J. ; Li, Q.Y. ; Su, C. ; Xue, Z.W. ; Liu, Y.W. ; Sun, Y.J. ; Liang, H.</creatorcontrib><description>To cope with the challenge of high hit rates in some
applications, the new-generation large-area Resistive Plate Chamber
(RPC) with 1 mm thin gap was proposed. Compared to the RPC
generation presently, the signal of the thin-gap RPC is much weaker
(of the order of hundreds of μV) and faster (pulse width of about
5 ns). Hence a new-generation Front-End (FE) electronics needs to
be developed for the thin-gap RPC. The FE board contains 8
independent electronic channels, each with an amplifier, a
discriminator, and a Low-Voltage Differential Signaling (LVDS)
transmitter. The amplifier is made of discrete components, with
particular emphasis on SiGe:C transistors. A simplified but stable
power system is designed for the FE board, and its status can be
monitored in real-time. The test results show that the overall
charge gain of the FE amplifier reaches 0.4 mV/fC, with very low
noise (lower than 700 μV RMS with up to 10 pF input detector
capacitance), and good linearity when the amplitude of the input
amplitude is lower than 3 mV. The -3-dB bandwidth of the
amplifier reaches 154 MHz. The jitter caused by the electronics
(including amplifier, discriminator and LVDS transmitter) is around
10 ps when the threshold voltage is higher than 20 mV. The maximum
event rate per channel exceeds 20 MHz. The cosmic ray test was
conducted with two FE boards mounted on a 1 mm thin-gap RPC of
1.4 × 0.4 m
2
area. The efficiency of the detector system
reaches 95% when the threshold voltage is 20 mV, with almost no
accidental coincidence event. The overall time resolution of the
detector system is 484 ps. The performance of our FE electronics
satisfies the requirement of the thin-gap RPC.</description><identifier>ISSN: 1748-0221</identifier><identifier>EISSN: 1748-0221</identifier><identifier>DOI: 10.1088/1748-0221/16/11/T11004</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Amplification ; Amplifiers ; Amplitudes ; Analogue electronic circuits ; Cosmic rays ; Electronics ; Front-end electronics for detector readout ; Low noise ; Muon spectrometers ; Pulse duration ; Receivers & amplifiers ; Resistive plate chambers ; Sensors ; Signal generation ; Threshold voltage ; Transistors ; Vibration</subject><ispartof>Journal of instrumentation, 2021-11, Vol.16 (11), p.T11004</ispartof><rights>2021 IOP Publishing Ltd and Sissa Medialab</rights><rights>Copyright IOP Publishing Nov 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-5a50f22e16096dbd49331ce2d6eae75c6d085abf1279ed27bed6829b29ec261a3</citedby><cites>FETCH-LOGICAL-c361t-5a50f22e16096dbd49331ce2d6eae75c6d085abf1279ed27bed6829b29ec261a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1748-0221/16/11/T11004/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Ge, J.J.</creatorcontrib><creatorcontrib>Li, Q.Y.</creatorcontrib><creatorcontrib>Su, C.</creatorcontrib><creatorcontrib>Xue, Z.W.</creatorcontrib><creatorcontrib>Liu, Y.W.</creatorcontrib><creatorcontrib>Sun, Y.J.</creatorcontrib><creatorcontrib>Liang, H.</creatorcontrib><title>Development of a front-end electronics for thin-gap resistive plate chamber</title><title>Journal of instrumentation</title><addtitle>J. Instrum</addtitle><description>To cope with the challenge of high hit rates in some
applications, the new-generation large-area Resistive Plate Chamber
(RPC) with 1 mm thin gap was proposed. Compared to the RPC
generation presently, the signal of the thin-gap RPC is much weaker
(of the order of hundreds of μV) and faster (pulse width of about
5 ns). Hence a new-generation Front-End (FE) electronics needs to
be developed for the thin-gap RPC. The FE board contains 8
independent electronic channels, each with an amplifier, a
discriminator, and a Low-Voltage Differential Signaling (LVDS)
transmitter. The amplifier is made of discrete components, with
particular emphasis on SiGe:C transistors. A simplified but stable
power system is designed for the FE board, and its status can be
monitored in real-time. The test results show that the overall
charge gain of the FE amplifier reaches 0.4 mV/fC, with very low
noise (lower than 700 μV RMS with up to 10 pF input detector
capacitance), and good linearity when the amplitude of the input
amplitude is lower than 3 mV. The -3-dB bandwidth of the
amplifier reaches 154 MHz. The jitter caused by the electronics
(including amplifier, discriminator and LVDS transmitter) is around
10 ps when the threshold voltage is higher than 20 mV. The maximum
event rate per channel exceeds 20 MHz. The cosmic ray test was
conducted with two FE boards mounted on a 1 mm thin-gap RPC of
1.4 × 0.4 m
2
area. The efficiency of the detector system
reaches 95% when the threshold voltage is 20 mV, with almost no
accidental coincidence event. The overall time resolution of the
detector system is 484 ps. The performance of our FE electronics
satisfies the requirement of the thin-gap RPC.</description><subject>Amplification</subject><subject>Amplifiers</subject><subject>Amplitudes</subject><subject>Analogue electronic circuits</subject><subject>Cosmic rays</subject><subject>Electronics</subject><subject>Front-end electronics for detector readout</subject><subject>Low noise</subject><subject>Muon spectrometers</subject><subject>Pulse duration</subject><subject>Receivers & amplifiers</subject><subject>Resistive plate chambers</subject><subject>Sensors</subject><subject>Signal generation</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Vibration</subject><issn>1748-0221</issn><issn>1748-0221</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LxDAQxYMouK5-BQl4E-pm0jZtj7L-xQUv6zmkycTt0m1qkl3w29ulonsQPM0M83vzmEfIJbAbYGU5gyIrE8Y5zEDMAGZLAMayIzL5WRwf9KfkLIQ1Y3mVZ2xCXu5wh63rN9hF6ixV1HrXxQQ7Q7FFHYep0YFa52lcNV3yrnrqMTQhNjukfasiUr1Smxr9OTmxqg148V2n5O3hfjl_Shavj8_z20WiUwExyVXOLOcIglXC1Car0hQ0ciNQYZFrYViZq9oCLyo0vKjRiJJXNa9QcwEqnZKr8W7v3ccWQ5Rrt_XdYCn58BbkkJXZQImR0t6F4NHK3jcb5T8lMLkPTu4zkftMJAgJIMfgBuH1KGxc_3t53XSD0SEoe2MHmP8B_-PwBRViff4</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Ge, J.J.</creator><creator>Li, Q.Y.</creator><creator>Su, C.</creator><creator>Xue, Z.W.</creator><creator>Liu, Y.W.</creator><creator>Sun, Y.J.</creator><creator>Liang, H.</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20211101</creationdate><title>Development of a front-end electronics for thin-gap resistive plate chamber</title><author>Ge, J.J. ; Li, Q.Y. ; Su, C. ; Xue, Z.W. ; Liu, Y.W. ; Sun, Y.J. ; Liang, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-5a50f22e16096dbd49331ce2d6eae75c6d085abf1279ed27bed6829b29ec261a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Amplification</topic><topic>Amplifiers</topic><topic>Amplitudes</topic><topic>Analogue electronic circuits</topic><topic>Cosmic rays</topic><topic>Electronics</topic><topic>Front-end electronics for detector readout</topic><topic>Low noise</topic><topic>Muon spectrometers</topic><topic>Pulse duration</topic><topic>Receivers & amplifiers</topic><topic>Resistive plate chambers</topic><topic>Sensors</topic><topic>Signal generation</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Vibration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ge, J.J.</creatorcontrib><creatorcontrib>Li, Q.Y.</creatorcontrib><creatorcontrib>Su, C.</creatorcontrib><creatorcontrib>Xue, Z.W.</creatorcontrib><creatorcontrib>Liu, Y.W.</creatorcontrib><creatorcontrib>Sun, Y.J.</creatorcontrib><creatorcontrib>Liang, H.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of instrumentation</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ge, J.J.</au><au>Li, Q.Y.</au><au>Su, C.</au><au>Xue, Z.W.</au><au>Liu, Y.W.</au><au>Sun, Y.J.</au><au>Liang, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of a front-end electronics for thin-gap resistive plate chamber</atitle><jtitle>Journal of instrumentation</jtitle><addtitle>J. Instrum</addtitle><date>2021-11-01</date><risdate>2021</risdate><volume>16</volume><issue>11</issue><spage>T11004</spage><pages>T11004-</pages><issn>1748-0221</issn><eissn>1748-0221</eissn><abstract>To cope with the challenge of high hit rates in some
applications, the new-generation large-area Resistive Plate Chamber
(RPC) with 1 mm thin gap was proposed. Compared to the RPC
generation presently, the signal of the thin-gap RPC is much weaker
(of the order of hundreds of μV) and faster (pulse width of about
5 ns). Hence a new-generation Front-End (FE) electronics needs to
be developed for the thin-gap RPC. The FE board contains 8
independent electronic channels, each with an amplifier, a
discriminator, and a Low-Voltage Differential Signaling (LVDS)
transmitter. The amplifier is made of discrete components, with
particular emphasis on SiGe:C transistors. A simplified but stable
power system is designed for the FE board, and its status can be
monitored in real-time. The test results show that the overall
charge gain of the FE amplifier reaches 0.4 mV/fC, with very low
noise (lower than 700 μV RMS with up to 10 pF input detector
capacitance), and good linearity when the amplitude of the input
amplitude is lower than 3 mV. The -3-dB bandwidth of the
amplifier reaches 154 MHz. The jitter caused by the electronics
(including amplifier, discriminator and LVDS transmitter) is around
10 ps when the threshold voltage is higher than 20 mV. The maximum
event rate per channel exceeds 20 MHz. The cosmic ray test was
conducted with two FE boards mounted on a 1 mm thin-gap RPC of
1.4 × 0.4 m
2
area. The efficiency of the detector system
reaches 95% when the threshold voltage is 20 mV, with almost no
accidental coincidence event. The overall time resolution of the
detector system is 484 ps. The performance of our FE electronics
satisfies the requirement of the thin-gap RPC.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1748-0221/16/11/T11004</doi><tpages>12</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1748-0221 |
| ispartof | Journal of instrumentation, 2021-11, Vol.16 (11), p.T11004 |
| issn | 1748-0221 1748-0221 |
| language | eng |
| recordid | cdi_proquest_journals_2595151484 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Amplification Amplifiers Amplitudes Analogue electronic circuits Cosmic rays Electronics Front-end electronics for detector readout Low noise Muon spectrometers Pulse duration Receivers & amplifiers Resistive plate chambers Sensors Signal generation Threshold voltage Transistors Vibration |
| title | Development of a front-end electronics for thin-gap resistive plate chamber |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T20%3A47%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Development%20of%20a%20front-end%20electronics%20for%20thin-gap%20resistive%20plate%20chamber&rft.jtitle=Journal%20of%20instrumentation&rft.au=Ge,%20J.J.&rft.date=2021-11-01&rft.volume=16&rft.issue=11&rft.spage=T11004&rft.pages=T11004-&rft.issn=1748-0221&rft.eissn=1748-0221&rft_id=info:doi/10.1088/1748-0221/16/11/T11004&rft_dat=%3Cproquest_iop_j%3E2595151484%3C/proquest_iop_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2595151484&rft_id=info:pmid/&rfr_iscdi=true |