Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene...

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Veröffentlicht in:	CrystEngComm 2021-11, Vol.23 (42), p.746-7411
Hauptverfasser:	Jia, Yanqing, Wu, Haidi, Zhao, Jianglin, Guo, Haibin, Zeng, Yu, Wang, Boyu, Zhang, Chi, Zhang, Yachao, Ning, Jing, Zhang, Jincheng, Zhang, Tao, Wang, Dong, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorption Aluminum nitride Carbon Diffusion effects Epitaxial growth Graphene Substrates Transfer printing
Online-Zugang:	Volltext
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