Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film
Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene...
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| Veröffentlicht in: | CrystEngComm 2021-11, Vol.23 (42), p.746-7411 |
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| container_title | CrystEngComm |
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| creator | Jia, Yanqing Wu, Haidi Zhao, Jianglin Guo, Haibin Zeng, Yu Wang, Boyu Zhang, Chi Zhang, Yachao Ning, Jing Zhang, Jincheng Zhang, Tao Wang, Dong Hao, Yue |
| description | Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene is summarized in turn as diffusion-dominated, combined-effect, adsorption-dominated and decomposition-dominated. A high-quality and transferable AlN epitaxial layer was obtained by regulating the combination of graphene and AlN. Finally, a flexible 3 × 3 cm
2
AlN film with an RMS of 0.748 nm was achieved. The proposed growth mechanism fills the gap in the study of the growth mechanism of AlN on graphene, and will help to explore new methods for the preparation of carbon-based nitride devices based on van der Waals epitaxy-transfer printing, realize substrate selection that does not rely on epitaxial relationships, and provide a revolutionary technology for the development of high-efficiency flexible devices.
We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film. |
| doi_str_mv | 10.1039/d1ce00988e |
| format | Article |
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2
AlN film with an RMS of 0.748 nm was achieved. The proposed growth mechanism fills the gap in the study of the growth mechanism of AlN on graphene, and will help to explore new methods for the preparation of carbon-based nitride devices based on van der Waals epitaxy-transfer printing, realize substrate selection that does not rely on epitaxial relationships, and provide a revolutionary technology for the development of high-efficiency flexible devices.
We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film.</description><identifier>ISSN: 1466-8033</identifier><identifier>EISSN: 1466-8033</identifier><identifier>DOI: 10.1039/d1ce00988e</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Adsorption ; Aluminum nitride ; Carbon ; Diffusion effects ; Epitaxial growth ; Graphene ; Substrates ; Transfer printing</subject><ispartof>CrystEngComm, 2021-11, Vol.23 (42), p.746-7411</ispartof><rights>Copyright Royal Society of Chemistry 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c281t-c223a326d1fedf6ce70eceb0aabe29c9e8297ae33720a851a7f569227ce4f8ba3</citedby><cites>FETCH-LOGICAL-c281t-c223a326d1fedf6ce70eceb0aabe29c9e8297ae33720a851a7f569227ce4f8ba3</cites><orcidid>0000-0002-3766-1158</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Jia, Yanqing</creatorcontrib><creatorcontrib>Wu, Haidi</creatorcontrib><creatorcontrib>Zhao, Jianglin</creatorcontrib><creatorcontrib>Guo, Haibin</creatorcontrib><creatorcontrib>Zeng, Yu</creatorcontrib><creatorcontrib>Wang, Boyu</creatorcontrib><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Zhang, Yachao</creatorcontrib><creatorcontrib>Ning, Jing</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Wang, Dong</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><title>Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film</title><title>CrystEngComm</title><description>Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene is summarized in turn as diffusion-dominated, combined-effect, adsorption-dominated and decomposition-dominated. A high-quality and transferable AlN epitaxial layer was obtained by regulating the combination of graphene and AlN. Finally, a flexible 3 × 3 cm
2
AlN film with an RMS of 0.748 nm was achieved. The proposed growth mechanism fills the gap in the study of the growth mechanism of AlN on graphene, and will help to explore new methods for the preparation of carbon-based nitride devices based on van der Waals epitaxy-transfer printing, realize substrate selection that does not rely on epitaxial relationships, and provide a revolutionary technology for the development of high-efficiency flexible devices.
We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film.</description><subject>Adsorption</subject><subject>Aluminum nitride</subject><subject>Carbon</subject><subject>Diffusion effects</subject><subject>Epitaxial growth</subject><subject>Graphene</subject><subject>Substrates</subject><subject>Transfer printing</subject><issn>1466-8033</issn><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpNkM1LwzAYxoMoOKcX70LAm1DNx9omxzHrFIZ60HNJ0zdrRvqxpMXtv7c6US_v8x5-PA_8ELqk5JYSLu9KqoEQKQQcoQmdJUkkCOfH__5TdBbChhA6o5RM0OvStx99hWvQlWpsqHHb4LVXXQUNRB7Wg1M9lLiy6yraDsrZfo-hs73a7XFrsHGws4UDPHfP2FhXn6MTo1yAi5-coveH7G3xGK1elk-L-SrSTNB-vIwrzpKSGihNoiEloKEgShXApJYgmEwVcJ4yokRMVWriRDKWapgZUSg-RdeH3s632wFCn2_awTfjZM5iSUlM4iQeqZsDpX0bggeTd97Wyu9zSvIvY_k9XWTfxrIRvjrAPuhf7s8o_wRekGiX</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Jia, Yanqing</creator><creator>Wu, Haidi</creator><creator>Zhao, Jianglin</creator><creator>Guo, Haibin</creator><creator>Zeng, Yu</creator><creator>Wang, Boyu</creator><creator>Zhang, Chi</creator><creator>Zhang, Yachao</creator><creator>Ning, Jing</creator><creator>Zhang, Jincheng</creator><creator>Zhang, Tao</creator><creator>Wang, Dong</creator><creator>Hao, Yue</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3766-1158</orcidid></search><sort><creationdate>20211101</creationdate><title>Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film</title><author>Jia, Yanqing ; Wu, Haidi ; Zhao, Jianglin ; Guo, Haibin ; Zeng, Yu ; Wang, Boyu ; Zhang, Chi ; Zhang, Yachao ; Ning, Jing ; Zhang, Jincheng ; Zhang, Tao ; Wang, Dong ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c281t-c223a326d1fedf6ce70eceb0aabe29c9e8297ae33720a851a7f569227ce4f8ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Adsorption</topic><topic>Aluminum nitride</topic><topic>Carbon</topic><topic>Diffusion effects</topic><topic>Epitaxial growth</topic><topic>Graphene</topic><topic>Substrates</topic><topic>Transfer printing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jia, Yanqing</creatorcontrib><creatorcontrib>Wu, Haidi</creatorcontrib><creatorcontrib>Zhao, Jianglin</creatorcontrib><creatorcontrib>Guo, Haibin</creatorcontrib><creatorcontrib>Zeng, Yu</creatorcontrib><creatorcontrib>Wang, Boyu</creatorcontrib><creatorcontrib>Zhang, Chi</creatorcontrib><creatorcontrib>Zhang, Yachao</creatorcontrib><creatorcontrib>Ning, Jing</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Wang, Dong</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>CrystEngComm</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jia, Yanqing</au><au>Wu, Haidi</au><au>Zhao, Jianglin</au><au>Guo, Haibin</au><au>Zeng, Yu</au><au>Wang, Boyu</au><au>Zhang, Chi</au><au>Zhang, Yachao</au><au>Ning, Jing</au><au>Zhang, Jincheng</au><au>Zhang, Tao</au><au>Wang, Dong</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film</atitle><jtitle>CrystEngComm</jtitle><date>2021-11-01</date><risdate>2021</risdate><volume>23</volume><issue>42</issue><spage>746</spage><epage>7411</epage><pages>746-7411</pages><issn>1466-8033</issn><eissn>1466-8033</eissn><abstract>Flexible aluminium nitride (AlN) films can enable the future preparation of carbon-based nitride devices. We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for high-quality and transferable large-size AlN films. Then, the growth mode of AlN on graphene is summarized in turn as diffusion-dominated, combined-effect, adsorption-dominated and decomposition-dominated. A high-quality and transferable AlN epitaxial layer was obtained by regulating the combination of graphene and AlN. Finally, a flexible 3 × 3 cm
2
AlN film with an RMS of 0.748 nm was achieved. The proposed growth mechanism fills the gap in the study of the growth mechanism of AlN on graphene, and will help to explore new methods for the preparation of carbon-based nitride devices based on van der Waals epitaxy-transfer printing, realize substrate selection that does not rely on epitaxial relationships, and provide a revolutionary technology for the development of high-efficiency flexible devices.
We report a novel diffusion-adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d1ce00988e</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3766-1158</orcidid></addata></record> |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Adsorption Aluminum nitride Carbon Diffusion effects Epitaxial growth Graphene Substrates Transfer printing |
| title | Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film |
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