Effects of 29Si and 1H on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

We report on a study that offers fundamental physical insight into an important phenomenon in solid state device physics, tunneling in Si/SiO2. We observe near-zero field magnetoresistance via spin-dependent trap-assisted-tunneling in both unpassivated and passivated Si/SiO2 and 28Si/28SiO2 metal–in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2021-11, Vol.119 (18)
Hauptverfasser:	Frantz, Elias B., Michalak, David J., Harmon, Nicholas J., Henry, Eric M., Flatté, Michael E., King, Sean W., Clarke, James S., Lenahan, Patrick M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Bonding strength Capacitors Defects Magnetic resonance Magnetoresistance Magnetoresistivity MIS (semiconductors) Nuclei Silicon dioxide Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!