Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

Multi‐fin devices are the most reliable option for terahertz (THz) frequency applications at nano‐regime. In this work impact of spacer engineering on multi‐fin SOI FET performance is evaluated by invoking single low‐k (Air), high‐k (Si3N4, HfO2), and hybrid dual‐k (Air + Si3N4) spacer in the underl...

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Veröffentlicht in:	International journal of RF and microwave computer-aided engineering 2021-12, Vol.31 (12), p.n/a
Hauptverfasser:	Sreenivasulu, V. Bharath, Narendar, Vadthiya
Format:	Artikel
Sprache:	eng
Schlagworte:	analog and RF analysis dynamic power and power consumption Hafnium oxide Harmonic distortion hybrid spacer Linearity linearity analysis multi‐fin SOI FET Parameters Performance evaluation Power consumption Power management Silicon nitride SOI (semiconductors) Terahertz frequencies
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