Hole Transport Layer based on atomic layer deposited V2Ox films: Paving the road to semi-transparent CZTSe solar cells

•ALD V2Ox HTL in CZTSe-based solar cell in order to obtain semi-transparent devices.•CZTSe-based solar cells reveal efficiency up to 3.9% for devices annealed at 225 °C.•Notable 10mΩcm2 contact resistivity between the V2Ox-based contact and CZTSe absorber.•Novel cleaning procedure based in diluted H...

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Veröffentlicht in:	Solar energy 2021-09, Vol.226, p.64-71
Hauptverfasser:	Almache-Hernández, Rosa, Pusay, Benjamín, Tiwari, Kunal, Ros, Eloi, Mastmitja, Gerard, Becerril-Romero, Ignacio, Martín, Isidro, Voz, Cristóbal, Puigdollers, Joaquim, Saucedo, Edgardo, Ortega, Pablo
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Carrier-selective contact layer Copper zinc tin selenide CZTSe Electrical resistivity Electron transport Hole transport layer Hydrofluoric acid Molybdenum Optimization Oxide coatings Paving Photovoltaic cells Photovoltaics Quality assessment Semi-transparent solar cells Solar cells Solar energy Thin films Transparent metal oxides Vanadium Vanadium oxide Vanadium oxides
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