Lopsided-Gating Leads to Multi-State and Photo-Switching Behaviors With Enhanced Photodetections

In this paper, we propose a new gating scheme that optically turns on a phototransistor by means of a novel structure of lopsided gate. Different from the conventional structure in which the gate electrode overlaps both the source and drain electrodes, the new gate structure is lopsided to form an u...

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Veröffentlicht in:	IEEE sensors journal 2021-10, Vol.21 (20), p.22638-22644
Hauptverfasser:	Kim, Somi, Yoo, Hocheon, Hong, Seongin
Format:	Artikel
Sprache:	eng
Schlagworte:	amorphous silicon Current measurement Dark current Electrodes Field effect transistors gate structure Logic gates Multi switching Optical switches photo transistor photo triggered Photosensitivity Phototransistors Switches Switching
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