Light Transmission and Surface Topography of KU-1 Optical Quartz After Sputtering and Cleaning from Al Films in RF Discharge of H2(D2)–Ne Mixtures
In plasma devices, in which plasma–wall interaction and material migration are significant, the diagnostic-window transmission may decrease due to the contamination of plasma-cleaning components by sputtered materials. We discuss the cleaning of KU-1 fused silica, which simulates the diagnostic wind...
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Veröffentlicht in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2021-09, Vol.15 (5), p.1029-1038 |
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Sprache: | eng |
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Zusammenfassung: | In plasma devices, in which plasma–wall interaction and material migration are significant, the diagnostic-window transmission may decrease due to the contamination of plasma-cleaning components by sputtered materials. We discuss the cleaning of KU-1 fused silica, which simulates the diagnostic window, from aluminum films in RF plasma generated in pure H
2
(D
2
) and Ne and in H
2
(D
2
)–0.23Ne mixtures. Aluminum is used as a chemical analogue of Be, which is the main material of the International Thermonuclear Experimental Reactor (ITER) first wall. The morphology of the plasma-treated surface is investigated by atomic force microscopy, the chemical composition is analyzed by X-ray photoelectron spectroscopy, and the transmission spectra in the range 400−1000 nm shows that plasma cleaning is accompanied by the slight reduction of quartz to suboxides and a simultaneous decrease in roughness
R
q
from 1.3 up to 1.0 nm. After plasma treatment of the quartz surface, a decrease in light transmission by 1.5–2% in the wavelength range 400–750 nm is observed. Further sputtering of the purified quartz surface with the removal of a layer with a thickness of more than 300 nm is accompanied by gradual smoothing of the surface and a decrease in
R
q
to 1 nm, but with the retention of reduced light transmission. All investigated gases, hydrogen isotopes, neon and D
2
(H
2
)–Ne mixtures, are suitable for removing Al films from the quartz surface at a RF power of several W/cm
2
and temperatures of 20–100°C. |
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ISSN: | 1027-4510 1819-7094 |
DOI: | 10.1134/S102745102105027X |