Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2

The fabrication of Hf0.5Zr0.5O2‐ferroelectric negative capacitor using solution combustion is presented for the first time. The starting materials used for the solution combustion to form equimolar Hf0.5Zr0.5O2 are to act as both combustible elements and cation sources. Jain's method, which is...

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Veröffentlicht in:	Advanced functional materials 2021-10, Vol.31 (43), p.n/a
Hauptverfasser:	Pujar, Pavan, Cho, Haewon, Gandla, Srinivas, Naqi, Muhammad, Hong, Seongin, Kim, Sunkook
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Combustion Ferroelectricity Field effect transistors Flammability Jain's method Materials science negative capacitance Orthorhombic phase Oxygen Propellant chemistry Semiconductor devices solution combustion steep slope Thin films Transistors
Online-Zugang:	Volltext
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