Impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in crystalline silicon

We examine the impact of hydrogen on the boron-oxygen-related lifetime degradation and regeneration kinetics in boron-doped p-type Czochralski-grown silicon wafers. We introduce the hydrogen into the silicon bulk by rapid thermal annealing. The hydrogen source are hydrogen-rich silicon nitride (SiNx...

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Veröffentlicht in:	Solar energy materials and solar cells 2021-10, Vol.232, p.111340, Article 111340
Hauptverfasser:	Helmich, Lailah, Walter, Dominic C., Falster, Robert, Voronkov, Vladimir V., Schmidt, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum oxide Boron Boron-oxygen defect Carrier lifetime Czochralski-grown silicon Deactivation Degradation Diffusion barriers Diffusion rate Hydrogen Kinetics LID Light intensity Luminous intensity Oxygen Photovoltaic cells Regeneration Room temperature Silicon Silicon nitride Silicon wafers Solar cells Thickness
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