In-operando x-ray topography analysis of SiC metal–oxide–semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations

We developed an in-operando x-ray topography method for dynamically visualizing single Shockley-type stacking fault (1SSF) expansion motions in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) during their operations and investigated the effect of the operating cond...

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Veröffentlicht in:	Journal of applied physics 2021-10, Vol.130 (14)
Hauptverfasser:	Konishi, Kumiko, Fujita, Ryusei, Kobayashi, Keisuke, Yoneyama, Akio, Ishiji, Kotaro, Okino, Hiroyuki, Shima, Akio, Ujihara, Toru
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Current density Dislocation density Field effect transistors High resolution Metal oxide semiconductors MOSFETs Semiconductor devices Silicon carbide Stacking faults Topography Transistors X ray topography
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