Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals
•CdMnTe and CdMgTe crystals are two promising radiation detector materials.•Crystal quality and detector performance are greatly affected by Te inclusions.•Correlation between Te inclusions and opto-electrical properties are summarized. In this paper, the effects of Te inclusions on the optical and...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2021-10, Vol.571, p.126259, Article 126259 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | 126259 |
| container_title | Journal of crystal growth |
| container_volume | 571 |
| creator | Yu, Pengfei Gao, Pandeng Shao, Tingquan Liu, Wenfei Jiang, Biru Liu, Chongqi Ma, Zhefan Zheng, Jiahong |
| description | •CdMnTe and CdMgTe crystals are two promising radiation detector materials.•Crystal quality and detector performance are greatly affected by Te inclusions.•Correlation between Te inclusions and opto-electrical properties are summarized.
In this paper, the effects of Te inclusions on the optical and electrical properties of CdMnTe and CdMgTe crystals grown by the modified vertical Bridgman method were investigated. For CdMnTe ingot, the average size and density distribution of Te inclusions along axial direction were in the range of 12 ~ 29 μm and 1.53 × 104 cm−2 ~ 2.81 × 105 cm−2, respectively. For CdMgTe ingot, the average size and density distribution of Te inclusions were in the range of 6 ~ 20 μm and 8.17 × 103 cm−2 ~ 2.42 × 104 cm−2, respectively. The density and size of Te inclusions increased gradually from the first-to-freeze part to the last-to-freeze part for CdMnTe ingot, while that of CdMgTe ingot first decreased and then increased. For both CdMnTe and CdMgTe ingots, the resistivity, IR transmittance and FWHM of (D0, X) peak first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The middle-to-freeze parts of both ingots had the best crystal quality. For both CdMnTe and CdMgTe detectors, the energy resolution and (μτ)e value were first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The detectors fabricated by the middle-to-freeze parts of both crystals had the best performance and can could meet the requirements of room temperature radiation detection.
PACS: 78.30.Fs; 78.55.Et; 81.40.Ef. |
| doi_str_mv | 10.1016/j.jcrysgro.2021.126259 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2581541602</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024821002347</els_id><sourcerecordid>2581541602</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-2fdc1a3eaf7db47f94dadac9d0bd3a6bb26014e73bb12ef98b9dc614a97f47d63</originalsourceid><addsrcrecordid>eNqFkEtLxDAQx4MouD6-ggQ8tyZp-ropxReseFnPIY_pmlKbmmSV_famrJ69zAzD_z-PH0JXlOSU0OpmyAft92HrXc4IozllFSvbI7SiTV1kJSHsGK1SZBlhvDlFZyEMhCQnJStkO-c9jDJaN2EF8RtgwhvAdtLjLqRmwHIyOL4DdnN0GYygo7dajnj2bgYfLQTsetyZlyn5FnEqt6kMdtqOgJfbohzDBTrpU4LL33yO3h7uN91Ttn59fO7u1pkuOIkZ642msgDZ10bxum-5kUbq1hBlClkpxSpCOdSFUpRB3zaqNbqiXLZ1z2tTFefo-jA33fe5gxDF4HZ-SisFKxtacloRllTVQaW9C8FDL2ZvP6TfC0rEglUM4g-rWLCKA9ZkvD0YIf3wZcGLoC1MGoz1CY0wzv434gcYAYa6</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2581541602</pqid></control><display><type>article</type><title>Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Yu, Pengfei ; Gao, Pandeng ; Shao, Tingquan ; Liu, Wenfei ; Jiang, Biru ; Liu, Chongqi ; Ma, Zhefan ; Zheng, Jiahong</creator><creatorcontrib>Yu, Pengfei ; Gao, Pandeng ; Shao, Tingquan ; Liu, Wenfei ; Jiang, Biru ; Liu, Chongqi ; Ma, Zhefan ; Zheng, Jiahong</creatorcontrib><description>•CdMnTe and CdMgTe crystals are two promising radiation detector materials.•Crystal quality and detector performance are greatly affected by Te inclusions.•Correlation between Te inclusions and opto-electrical properties are summarized.
In this paper, the effects of Te inclusions on the optical and electrical properties of CdMnTe and CdMgTe crystals grown by the modified vertical Bridgman method were investigated. For CdMnTe ingot, the average size and density distribution of Te inclusions along axial direction were in the range of 12 ~ 29 μm and 1.53 × 104 cm−2 ~ 2.81 × 105 cm−2, respectively. For CdMgTe ingot, the average size and density distribution of Te inclusions were in the range of 6 ~ 20 μm and 8.17 × 103 cm−2 ~ 2.42 × 104 cm−2, respectively. The density and size of Te inclusions increased gradually from the first-to-freeze part to the last-to-freeze part for CdMnTe ingot, while that of CdMgTe ingot first decreased and then increased. For both CdMnTe and CdMgTe ingots, the resistivity, IR transmittance and FWHM of (D0, X) peak first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The middle-to-freeze parts of both ingots had the best crystal quality. For both CdMnTe and CdMgTe detectors, the energy resolution and (μτ)e value were first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The detectors fabricated by the middle-to-freeze parts of both crystals had the best performance and can could meet the requirements of room temperature radiation detection.
PACS: 78.30.Fs; 78.55.Et; 81.40.Ef.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2021.126259</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Characterization ; A2. Bridgman Technique ; B1. Cadmium compounds ; B2 Semiconducting II-VI materials ; Bridgman method ; Crystal growth ; Crystals ; Density distribution ; Detectors ; Electrical properties ; Energy resolution ; Inclusions ; Ingots ; Optical properties ; Room temperature ; Single crystals</subject><ispartof>Journal of crystal growth, 2021-10, Vol.571, p.126259, Article 126259</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-2fdc1a3eaf7db47f94dadac9d0bd3a6bb26014e73bb12ef98b9dc614a97f47d63</citedby><cites>FETCH-LOGICAL-c340t-2fdc1a3eaf7db47f94dadac9d0bd3a6bb26014e73bb12ef98b9dc614a97f47d63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2021.126259$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Yu, Pengfei</creatorcontrib><creatorcontrib>Gao, Pandeng</creatorcontrib><creatorcontrib>Shao, Tingquan</creatorcontrib><creatorcontrib>Liu, Wenfei</creatorcontrib><creatorcontrib>Jiang, Biru</creatorcontrib><creatorcontrib>Liu, Chongqi</creatorcontrib><creatorcontrib>Ma, Zhefan</creatorcontrib><creatorcontrib>Zheng, Jiahong</creatorcontrib><title>Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals</title><title>Journal of crystal growth</title><description>•CdMnTe and CdMgTe crystals are two promising radiation detector materials.•Crystal quality and detector performance are greatly affected by Te inclusions.•Correlation between Te inclusions and opto-electrical properties are summarized.
In this paper, the effects of Te inclusions on the optical and electrical properties of CdMnTe and CdMgTe crystals grown by the modified vertical Bridgman method were investigated. For CdMnTe ingot, the average size and density distribution of Te inclusions along axial direction were in the range of 12 ~ 29 μm and 1.53 × 104 cm−2 ~ 2.81 × 105 cm−2, respectively. For CdMgTe ingot, the average size and density distribution of Te inclusions were in the range of 6 ~ 20 μm and 8.17 × 103 cm−2 ~ 2.42 × 104 cm−2, respectively. The density and size of Te inclusions increased gradually from the first-to-freeze part to the last-to-freeze part for CdMnTe ingot, while that of CdMgTe ingot first decreased and then increased. For both CdMnTe and CdMgTe ingots, the resistivity, IR transmittance and FWHM of (D0, X) peak first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The middle-to-freeze parts of both ingots had the best crystal quality. For both CdMnTe and CdMgTe detectors, the energy resolution and (μτ)e value were first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The detectors fabricated by the middle-to-freeze parts of both crystals had the best performance and can could meet the requirements of room temperature radiation detection.
PACS: 78.30.Fs; 78.55.Et; 81.40.Ef.</description><subject>A1. Characterization</subject><subject>A2. Bridgman Technique</subject><subject>B1. Cadmium compounds</subject><subject>B2 Semiconducting II-VI materials</subject><subject>Bridgman method</subject><subject>Crystal growth</subject><subject>Crystals</subject><subject>Density distribution</subject><subject>Detectors</subject><subject>Electrical properties</subject><subject>Energy resolution</subject><subject>Inclusions</subject><subject>Ingots</subject><subject>Optical properties</subject><subject>Room temperature</subject><subject>Single crystals</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxDAQx4MouD6-ggQ8tyZp-ropxReseFnPIY_pmlKbmmSV_famrJ69zAzD_z-PH0JXlOSU0OpmyAft92HrXc4IozllFSvbI7SiTV1kJSHsGK1SZBlhvDlFZyEMhCQnJStkO-c9jDJaN2EF8RtgwhvAdtLjLqRmwHIyOL4DdnN0GYygo7dajnj2bgYfLQTsetyZlyn5FnEqt6kMdtqOgJfbohzDBTrpU4LL33yO3h7uN91Ttn59fO7u1pkuOIkZ642msgDZ10bxum-5kUbq1hBlClkpxSpCOdSFUpRB3zaqNbqiXLZ1z2tTFefo-jA33fe5gxDF4HZ-SisFKxtacloRllTVQaW9C8FDL2ZvP6TfC0rEglUM4g-rWLCKA9ZkvD0YIf3wZcGLoC1MGoz1CY0wzv434gcYAYa6</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>Yu, Pengfei</creator><creator>Gao, Pandeng</creator><creator>Shao, Tingquan</creator><creator>Liu, Wenfei</creator><creator>Jiang, Biru</creator><creator>Liu, Chongqi</creator><creator>Ma, Zhefan</creator><creator>Zheng, Jiahong</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20211001</creationdate><title>Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals</title><author>Yu, Pengfei ; Gao, Pandeng ; Shao, Tingquan ; Liu, Wenfei ; Jiang, Biru ; Liu, Chongqi ; Ma, Zhefan ; Zheng, Jiahong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-2fdc1a3eaf7db47f94dadac9d0bd3a6bb26014e73bb12ef98b9dc614a97f47d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>A1. Characterization</topic><topic>A2. Bridgman Technique</topic><topic>B1. Cadmium compounds</topic><topic>B2 Semiconducting II-VI materials</topic><topic>Bridgman method</topic><topic>Crystal growth</topic><topic>Crystals</topic><topic>Density distribution</topic><topic>Detectors</topic><topic>Electrical properties</topic><topic>Energy resolution</topic><topic>Inclusions</topic><topic>Ingots</topic><topic>Optical properties</topic><topic>Room temperature</topic><topic>Single crystals</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Pengfei</creatorcontrib><creatorcontrib>Gao, Pandeng</creatorcontrib><creatorcontrib>Shao, Tingquan</creatorcontrib><creatorcontrib>Liu, Wenfei</creatorcontrib><creatorcontrib>Jiang, Biru</creatorcontrib><creatorcontrib>Liu, Chongqi</creatorcontrib><creatorcontrib>Ma, Zhefan</creatorcontrib><creatorcontrib>Zheng, Jiahong</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Pengfei</au><au>Gao, Pandeng</au><au>Shao, Tingquan</au><au>Liu, Wenfei</au><au>Jiang, Biru</au><au>Liu, Chongqi</au><au>Ma, Zhefan</au><au>Zheng, Jiahong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals</atitle><jtitle>Journal of crystal growth</jtitle><date>2021-10-01</date><risdate>2021</risdate><volume>571</volume><spage>126259</spage><pages>126259-</pages><artnum>126259</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•CdMnTe and CdMgTe crystals are two promising radiation detector materials.•Crystal quality and detector performance are greatly affected by Te inclusions.•Correlation between Te inclusions and opto-electrical properties are summarized.
In this paper, the effects of Te inclusions on the optical and electrical properties of CdMnTe and CdMgTe crystals grown by the modified vertical Bridgman method were investigated. For CdMnTe ingot, the average size and density distribution of Te inclusions along axial direction were in the range of 12 ~ 29 μm and 1.53 × 104 cm−2 ~ 2.81 × 105 cm−2, respectively. For CdMgTe ingot, the average size and density distribution of Te inclusions were in the range of 6 ~ 20 μm and 8.17 × 103 cm−2 ~ 2.42 × 104 cm−2, respectively. The density and size of Te inclusions increased gradually from the first-to-freeze part to the last-to-freeze part for CdMnTe ingot, while that of CdMgTe ingot first decreased and then increased. For both CdMnTe and CdMgTe ingots, the resistivity, IR transmittance and FWHM of (D0, X) peak first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The middle-to-freeze parts of both ingots had the best crystal quality. For both CdMnTe and CdMgTe detectors, the energy resolution and (μτ)e value were first increased and then decreased from the first-to-freeze part to the last-to-freeze part. The detectors fabricated by the middle-to-freeze parts of both crystals had the best performance and can could meet the requirements of room temperature radiation detection.
PACS: 78.30.Fs; 78.55.Et; 81.40.Ef.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2021.126259</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2021-10, Vol.571, p.126259, Article 126259 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_journals_2581541602 |
| source | Elsevier ScienceDirect Journals Complete |
| subjects | A1. Characterization A2. Bridgman Technique B1. Cadmium compounds B2 Semiconducting II-VI materials Bridgman method Crystal growth Crystals Density distribution Detectors Electrical properties Energy resolution Inclusions Ingots Optical properties Room temperature Single crystals |
| title | Correlation between Te inclusions and the opto-electrical properties of CdMnTe and CdMgTe single crystals |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T09%3A20%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Correlation%20between%20Te%20inclusions%20and%20the%20opto-electrical%20properties%20of%20CdMnTe%20and%20CdMgTe%20single%20crystals&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Yu,%20Pengfei&rft.date=2021-10-01&rft.volume=571&rft.spage=126259&rft.pages=126259-&rft.artnum=126259&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2021.126259&rft_dat=%3Cproquest_cross%3E2581541602%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2581541602&rft_id=info:pmid/&rft_els_id=S0022024821002347&rfr_iscdi=true |