Indentation-induced dislocations and cracks in (0001) freestanding and epitaxial GaN

The (0001) surface of freestanding GaN and an (0001) oriented epitaxial GaN layer of 3 μm thickness on sapphire have been deformed at room temperature using a Vickers indenter. The samples were indented with two different orientations of the indenter with loads in the range from 0.02 to 4.90 N and 0...

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