The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD
It was critical to optimize V/III ratio for growing high quality GaN epilayers, because a suitable V/III ratio can promote the two-dimensional growth mode and decrease the crystalline anisotropy. In this paper, in order to investigate the influence of the V/III ratio on the surface morphology and th...
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| Veröffentlicht in: | Journal of physics. Conference series 2011-02, Vol.276 (1), p.012199-5 |
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| creator | Yin, J Wu, Z H Sun, Y Q Fang, Y Y Wang, H Feng, C Zhang, J Dai, J N Chen, C Q |
| description | It was critical to optimize V/III ratio for growing high quality GaN epilayers, because a suitable V/III ratio can promote the two-dimensional growth mode and decrease the crystalline anisotropy. In this paper, in order to investigate the influence of the V/III ratio on the surface morphology and the crystal quality of nonpolar a-GaN, a-plane GaN thin films with different V/III ratios were grown on r-plane sapphire substrates with low-temperature (LT) GaN buffer layers (BLs) by metal-organic chemical-vapor deposition (MOCVD). The surface morphology of these a-GaN thin films was characterized by optical microscopy (OM) and atomic force microscopy (AFM). The crystal quality of the a-GaN thin films was investigated by high resolution X-ray diffraction (HRXRD). The results showed that the a-GaN thin films with a V/III ratio of 1200 had the smoothest surface morphology with a root mean square (RMS) surface roughness of 1.6 nm and the best crystal quality with a iiill-width-at-half-maximum (FWHM) of (11 0) x-ray rocking curve of 864 arcsec. |
| doi_str_mv | 10.1088/1742-6596/276/1/012199 |
| format | Article |
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In this paper, in order to investigate the influence of the V/III ratio on the surface morphology and the crystal quality of nonpolar a-GaN, a-plane GaN thin films with different V/III ratios were grown on r-plane sapphire substrates with low-temperature (LT) GaN buffer layers (BLs) by metal-organic chemical-vapor deposition (MOCVD). The surface morphology of these a-GaN thin films was characterized by optical microscopy (OM) and atomic force microscopy (AFM). The crystal quality of the a-GaN thin films was investigated by high resolution X-ray diffraction (HRXRD). The results showed that the a-GaN thin films with a V/III ratio of 1200 had the smoothest surface morphology with a root mean square (RMS) surface roughness of 1.6 nm and the best crystal quality with a iiill-width-at-half-maximum (FWHM) of (11 0) x-ray rocking curve of 864 arcsec.</description><identifier>ISSN: 1742-6596</identifier><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/276/1/012199</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Anisotropy ; Atomic force microscopy ; Buffer layers ; Crystals ; Gallium nitrides ; Low temperature ; Metalorganic chemical vapor deposition ; Microscopes ; Microscopy ; Morphology ; Optical microscopy ; Organic chemicals ; Organic chemistry ; Physics ; Sapphire ; Substrates ; Surface roughness ; Thin films ; X-rays</subject><ispartof>Journal of physics. Conference series, 2011-02, Vol.276 (1), p.012199-5</ispartof><rights>Copyright IOP Publishing Feb 2011</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c343t-74ec881d97b062c332f361b0e1d1596282867f975c0acd11c5fa5d3bba3590ee3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1742-6596/276/1/012199/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>315,781,785,1554,27630,27926,27927,53906,53933</link.rule.ids><linktorsrc>$$Uhttp://iopscience.iop.org/1742-6596/276/1/012199$$EView_record_in_IOP_Publishing$$FView_record_in_$$GIOP_Publishing</linktorsrc></links><search><creatorcontrib>Yin, J</creatorcontrib><creatorcontrib>Wu, Z H</creatorcontrib><creatorcontrib>Sun, Y Q</creatorcontrib><creatorcontrib>Fang, Y Y</creatorcontrib><creatorcontrib>Wang, H</creatorcontrib><creatorcontrib>Feng, C</creatorcontrib><creatorcontrib>Zhang, J</creatorcontrib><creatorcontrib>Dai, J N</creatorcontrib><creatorcontrib>Chen, C Q</creatorcontrib><title>The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD</title><title>Journal of physics. Conference series</title><description>It was critical to optimize V/III ratio for growing high quality GaN epilayers, because a suitable V/III ratio can promote the two-dimensional growth mode and decrease the crystalline anisotropy. In this paper, in order to investigate the influence of the V/III ratio on the surface morphology and the crystal quality of nonpolar a-GaN, a-plane GaN thin films with different V/III ratios were grown on r-plane sapphire substrates with low-temperature (LT) GaN buffer layers (BLs) by metal-organic chemical-vapor deposition (MOCVD). The surface morphology of these a-GaN thin films was characterized by optical microscopy (OM) and atomic force microscopy (AFM). The crystal quality of the a-GaN thin films was investigated by high resolution X-ray diffraction (HRXRD). The results showed that the a-GaN thin films with a V/III ratio of 1200 had the smoothest surface morphology with a root mean square (RMS) surface roughness of 1.6 nm and the best crystal quality with a iiill-width-at-half-maximum (FWHM) of (11 0) x-ray rocking curve of 864 arcsec.</description><subject>Anisotropy</subject><subject>Atomic force microscopy</subject><subject>Buffer layers</subject><subject>Crystals</subject><subject>Gallium nitrides</subject><subject>Low temperature</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Microscopes</subject><subject>Microscopy</subject><subject>Morphology</subject><subject>Optical microscopy</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Physics</subject><subject>Sapphire</subject><subject>Substrates</subject><subject>Surface roughness</subject><subject>Thin films</subject><subject>X-rays</subject><issn>1742-6596</issn><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kEFLwzAYhosoOKd_QQJevNTmS9akOcrUWVB3mbt4CGmauI6uqcmG7N_bsqEiw1wS-J4338sTRZeAbwBnWQJ8RGKWCpYQzhJIMBAQ4igafA-Of71Po7MQlhjT7vBB9DZbGGSsNXodkLNonuR5jrxaVw65BjWuaV2tPFJxW6vGoIl6QbaqVwG9e_fZ9Izfj4Jq20XlDSq26Hk6nt-dRydW1cFc7O9h9PpwPxs_xk_TST6-fYo1HdF1zEdGZxmUgheYEU0psZRBgQ2U0BUmGckYt4KnGitdAujUqrSkRaFoKrAxdBhd7_5tvfvYmLCWqypoU_et3CZI4BRjQRlLO_TqD7p0G9907SRJuSCCAIw6iu0o7V0I3ljZ-mql_FYClr1z2euUvU7ZOZcgd867YLwLVq79yRxkZVvajocD_P87vgBtRI3B</recordid><startdate>20110201</startdate><enddate>20110201</enddate><creator>Yin, J</creator><creator>Wu, Z H</creator><creator>Sun, Y Q</creator><creator>Fang, Y Y</creator><creator>Wang, H</creator><creator>Feng, C</creator><creator>Zhang, J</creator><creator>Dai, J N</creator><creator>Chen, C Q</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20110201</creationdate><title>The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD</title><author>Yin, J ; 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Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yin, J</au><au>Wu, Z H</au><au>Sun, Y Q</au><au>Fang, Y Y</au><au>Wang, H</au><au>Feng, C</au><au>Zhang, J</au><au>Dai, J N</au><au>Chen, C Q</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD</atitle><jtitle>Journal of physics. Conference series</jtitle><date>2011-02-01</date><risdate>2011</risdate><volume>276</volume><issue>1</issue><spage>012199</spage><epage>5</epage><pages>012199-5</pages><issn>1742-6596</issn><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>It was critical to optimize V/III ratio for growing high quality GaN epilayers, because a suitable V/III ratio can promote the two-dimensional growth mode and decrease the crystalline anisotropy. In this paper, in order to investigate the influence of the V/III ratio on the surface morphology and the crystal quality of nonpolar a-GaN, a-plane GaN thin films with different V/III ratios were grown on r-plane sapphire substrates with low-temperature (LT) GaN buffer layers (BLs) by metal-organic chemical-vapor deposition (MOCVD). The surface morphology of these a-GaN thin films was characterized by optical microscopy (OM) and atomic force microscopy (AFM). The crystal quality of the a-GaN thin films was investigated by high resolution X-ray diffraction (HRXRD). The results showed that the a-GaN thin films with a V/III ratio of 1200 had the smoothest surface morphology with a root mean square (RMS) surface roughness of 1.6 nm and the best crystal quality with a iiill-width-at-half-maximum (FWHM) of (11 0) x-ray rocking curve of 864 arcsec.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/276/1/012199</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Anisotropy Atomic force microscopy Buffer layers Crystals Gallium nitrides Low temperature Metalorganic chemical vapor deposition Microscopes Microscopy Morphology Optical microscopy Organic chemicals Organic chemistry Physics Sapphire Substrates Surface roughness Thin films X-rays |
| title | The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD |
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