Thermoelectric transport in V2O5 thin films
The density functional theory and the Boltzmann transport equation were used to calculate the thermoelectric transport coefficients for bulk V2O5. We performed the structural relaxation for the given compound based on the ABINIT code. The temperature dependence of the Seebeck coefficient as well as...
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| creator | Chumakov, Yu Santos, J R Ferreira, I Termentzidis, K Pokropivny, A S-Y, Xiong Cortona, P Volz, S |
| description | The density functional theory and the Boltzmann transport equation were used to calculate the thermoelectric transport coefficients for bulk V2O5. We performed the structural relaxation for the given compound based on the ABINIT code. The temperature dependence of the Seebeck coefficient as well as of the electrical and thermal electron conductivities of the X-ray and relaxed structures displays an anisotropic behavior while the corresponding traces for both structures present similar values. The simulation results are compared with the electro-optical measurement of the thermoelectric properties of V2O5 thin films obtained by thermal evaporation with different post annealing treatments. A Seebeck coefficient of −218μV/K at T=573K was obtained in the in-plane direction for thin films with thickness less than 100nm. |
| doi_str_mv | 10.1088/1742-6596/395/1/012016 |
| format | Conference Proceeding |
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We performed the structural relaxation for the given compound based on the ABINIT code. The temperature dependence of the Seebeck coefficient as well as of the electrical and thermal electron conductivities of the X-ray and relaxed structures displays an anisotropic behavior while the corresponding traces for both structures present similar values. The simulation results are compared with the electro-optical measurement of the thermoelectric properties of V2O5 thin films obtained by thermal evaporation with different post annealing treatments. A Seebeck coefficient of −218μV/K at T=573K was obtained in the in-plane direction for thin films with thickness less than 100nm.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/395/1/012016</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Boltzmann transport equation ; Density functional theory ; Engineering Sciences ; Materials ; Mathematical analysis ; Optical measurement ; Optical properties ; Physics ; Seebeck effect ; Temperature dependence ; Thermoelectricity ; Thickness ; Thin films ; Transport properties ; Vanadium pentoxide</subject><ispartof>Journal of physics. 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A Seebeck coefficient of −218μV/K at T=573K was obtained in the in-plane direction for thin films with thickness less than 100nm.</description><subject>Boltzmann transport equation</subject><subject>Density functional theory</subject><subject>Engineering Sciences</subject><subject>Materials</subject><subject>Mathematical analysis</subject><subject>Optical measurement</subject><subject>Optical properties</subject><subject>Physics</subject><subject>Seebeck effect</subject><subject>Temperature dependence</subject><subject>Thermoelectricity</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Transport properties</subject><subject>Vanadium pentoxide</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNo9jl9LwzAUxYMoOKdfQQo-idQmN0mTPI6hTijsZfoa2jShHf0zk0zw2xuZ7L6cwzmHyw-he4KfCZayIIJBXnJVFlTxghSYACblBVqci8uzl_Ia3YSwx5imEwv0tOusH2c7WBN9b7Lo6ykcZh-zfso-Ycuz2CXn-mEMt-jK1UOwd_-6RB-vL7v1Jq-2b-_rVZV3QETMSwDKCVZGSqMSjKXKgcBGNISbhGMsN9bZFpiRTjWOtU0LwJ2TiQhDQ5fo8fS3qwd98P1Y-x89173erCr9l2EAQSlh3yRtH07bg5-_jjZEvZ-Pfkp4GriQwErAjP4CxLVRvg</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Chumakov, Yu</creator><creator>Santos, J R</creator><creator>Ferreira, I</creator><creator>Termentzidis, K</creator><creator>Pokropivny, A</creator><creator>S-Y, Xiong</creator><creator>Cortona, P</creator><creator>Volz, S</creator><general>IOP Publishing</general><general>Institute of Physics Publishing</general><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-2446-6158</orcidid></search><sort><creationdate>20120101</creationdate><title>Thermoelectric transport in V2O5 thin films</title><author>Chumakov, Yu ; Santos, J R ; Ferreira, I ; Termentzidis, K ; Pokropivny, A ; S-Y, Xiong ; Cortona, P ; Volz, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h217t-62235109c88c9012e39f270c7b15c659ce5cefed24c8f9bf4dbd225ff833702b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Boltzmann transport equation</topic><topic>Density functional theory</topic><topic>Engineering Sciences</topic><topic>Materials</topic><topic>Mathematical analysis</topic><topic>Optical measurement</topic><topic>Optical properties</topic><topic>Physics</topic><topic>Seebeck effect</topic><topic>Temperature dependence</topic><topic>Thermoelectricity</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Transport properties</topic><topic>Vanadium pentoxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chumakov, Yu</creatorcontrib><creatorcontrib>Santos, J R</creatorcontrib><creatorcontrib>Ferreira, I</creatorcontrib><creatorcontrib>Termentzidis, K</creatorcontrib><creatorcontrib>Pokropivny, A</creatorcontrib><creatorcontrib>S-Y, Xiong</creatorcontrib><creatorcontrib>Cortona, P</creatorcontrib><creatorcontrib>Volz, S</creatorcontrib><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Database (1962 - current)</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Hyper Article en Ligne (HAL)</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chumakov, Yu</au><au>Santos, J R</au><au>Ferreira, I</au><au>Termentzidis, K</au><au>Pokropivny, A</au><au>S-Y, Xiong</au><au>Cortona, P</au><au>Volz, S</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Thermoelectric transport in V2O5 thin films</atitle><btitle>Journal of physics. Conference series</btitle><date>2012-01-01</date><risdate>2012</risdate><volume>395</volume><issue>1</issue><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>The density functional theory and the Boltzmann transport equation were used to calculate the thermoelectric transport coefficients for bulk V2O5. We performed the structural relaxation for the given compound based on the ABINIT code. The temperature dependence of the Seebeck coefficient as well as of the electrical and thermal electron conductivities of the X-ray and relaxed structures displays an anisotropic behavior while the corresponding traces for both structures present similar values. The simulation results are compared with the electro-optical measurement of the thermoelectric properties of V2O5 thin films obtained by thermal evaporation with different post annealing treatments. A Seebeck coefficient of −218μV/K at T=573K was obtained in the in-plane direction for thin films with thickness less than 100nm.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/395/1/012016</doi><orcidid>https://orcid.org/0000-0003-2446-6158</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Boltzmann transport equation Density functional theory Engineering Sciences Materials Mathematical analysis Optical measurement Optical properties Physics Seebeck effect Temperature dependence Thermoelectricity Thickness Thin films Transport properties Vanadium pentoxide |
| title | Thermoelectric transport in V2O5 thin films |
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