Low‐Voltage Magnetoelectric Coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3‐0.32PbTiO3 Thin‐Film Heterostructures

The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 n...

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Veröffentlicht in:	Advanced functional materials 2021-10, Vol.31 (40), p.n/a
Hauptverfasser:	Zhao, Wenbo, Kim, Jieun, Huang, Xiaoxi, Zhang, Lei, Pesquera, David, Velarde, Gabriel A. P., Gosavi, Tanay, Lin, Chia‐Ching, Nikonov, Dmitri E., Li, Hai, Young, Ian A., Ramesh, Ramamoorthy, Martin, Lane W.
Format:	Artikel
Sprache:	eng
Schlagworte:	anomalous Hall effect Coupling coefficients Data processing Electric potential Energy consumption Epitaxial growth Hall effect Heterostructures magnetoelectric coupling Materials science multiferroic heterostructures nonvolatile piezo‐strain effect Voltage
Online-Zugang:	Volltext
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