Single-electron transitions in one-dimensional native nanostructures

Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results...

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Hauptverfasser: Reiche, M, Kittler, M, Schmelz, M, Stolz, R, Pippel, E, Uebensee, H, Kermann, M, Ortlepp, T
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Kittler, M
Schmelz, M
Stolz, R
Pippel, E
Uebensee, H
Kermann, M
Ortlepp, T
description Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades.
doi_str_mv 10.1088/1742-6596/568/5/052024
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subjects Electron gas
Electron transitions
Energy levels
Low temperature
Physics
Quantum wells
Single-electron transitions
title Single-electron transitions in one-dimensional native nanostructures
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