Single-electron transitions in one-dimensional native nanostructures
Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results...
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description | Low-temperature measurements proved the existence of a two-dimensional electron gas at defined dislocation arrays in silicon. As a consequence, single-electron transitions (Coulomb blockades) are observed. It is shown that the high strain at dislocation cores modifies the band structure and results in the formation of quantum wells along dislocation lines. This causes quantization of energy levels inducing the formation of Coulomb blockades. |
doi_str_mv | 10.1088/1742-6596/568/5/052024 |
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source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Institute of Physics Open Access Journal Titles; IOPscience extra; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
subjects | Electron gas Electron transitions Energy levels Low temperature Physics Quantum wells Single-electron transitions |
title | Single-electron transitions in one-dimensional native nanostructures |
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