Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)
Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to...
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creator | Boyadjiev, S Georgieva, V Vergov, L Baji, Zs Gáber, F Szilágyi, I M |
description | Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology. |
doi_str_mv | 10.1088/1742-6596/559/1/012013 |
format | Conference Proceeding |
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Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/559/1/012013</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Atomic layer epitaxy ; Crystal structure ; Gas sensors ; Low concentrations ; Microbalances ; Nitrogen dioxide ; Physics ; Quartz crystals ; Room temperature ; Thin films ; Titanium dioxide</subject><ispartof>Journal of physics. Conference series, 2014, Vol.559 (1)</ispartof><rights>2014. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). 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These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.</description><subject>Atomic layer epitaxy</subject><subject>Crystal structure</subject><subject>Gas sensors</subject><subject>Low concentrations</subject><subject>Microbalances</subject><subject>Nitrogen dioxide</subject><subject>Physics</subject><subject>Quartz crystals</subject><subject>Room temperature</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><sourceid>BENPR</sourceid><recordid>eNo9T1FLwzAYDKLgnP4FCfiiD7X5kqZJHsfUKRT2MsG3kbRfNWNratIJ_fcWlN3LHdxx33eE3AJ7BKZ1DqrgWSlNmUtpcsgZcAbijMxOxvlJa31JrlLaMSYmqBn5WNlEE3bJd5-0j6HHOHhMNLT0B-NIhy_f0Y1fc9r6_SFNEextxIa6kdohHHxN93bESBvsQ_KDDx29X1RPD9fkorX7hDf_PCfvL8-b5WtWrVdvy0WV9aDFkBVlIxRq5jhCy2tuuGHGStU2rKineQ4KJSTTCpRx4AyAldZYpdEhE8jFnNz99U7Pfx8xDdtdOMZuOrnlUpVqgmTiFx3gU3I</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Boyadjiev, S</creator><creator>Georgieva, V</creator><creator>Vergov, L</creator><creator>Baji, Zs</creator><creator>Gáber, F</creator><creator>Szilágyi, I M</creator><general>IOP Publishing</general><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20140101</creationdate><title>Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)</title><author>Boyadjiev, S ; Georgieva, V ; Vergov, L ; Baji, Zs ; Gáber, F ; Szilágyi, I M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p183t-46d37e80b2e1f2c292909a57fd04c108b14735087179b1b911a5a9a78ebe03e23</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Atomic layer epitaxy</topic><topic>Crystal structure</topic><topic>Gas sensors</topic><topic>Low concentrations</topic><topic>Microbalances</topic><topic>Nitrogen dioxide</topic><topic>Physics</topic><topic>Quartz crystals</topic><topic>Room temperature</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Boyadjiev, S</creatorcontrib><creatorcontrib>Georgieva, V</creatorcontrib><creatorcontrib>Vergov, L</creatorcontrib><creatorcontrib>Baji, Zs</creatorcontrib><creatorcontrib>Gáber, F</creatorcontrib><creatorcontrib>Szilágyi, I M</creatorcontrib><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boyadjiev, S</au><au>Georgieva, V</au><au>Vergov, L</au><au>Baji, Zs</au><au>Gáber, F</au><au>Szilágyi, I M</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)</atitle><btitle>Journal of physics. Conference series</btitle><date>2014-01-01</date><risdate>2014</risdate><volume>559</volume><issue>1</issue><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. 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source | Institute of Physics IOPscience extra; IOP Publishing Free Content; EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
subjects | Atomic layer epitaxy Crystal structure Gas sensors Low concentrations Microbalances Nitrogen dioxide Physics Quartz crystals Room temperature Thin films Titanium dioxide |
title | Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD) |
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