Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)

Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to...

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Hauptverfasser: Boyadjiev, S, Georgieva, V, Vergov, L, Baji, Zs, Gáber, F, Szilágyi, I M
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Baji, Zs
Gáber, F
Szilágyi, I M
description Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.
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subjects Atomic layer epitaxy
Crystal structure
Gas sensors
Low concentrations
Microbalances
Nitrogen dioxide
Physics
Quartz crystals
Room temperature
Thin films
Titanium dioxide
title Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)
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