Observation of disorder induced weak localization in Gd:ZnO thin films

We have observed weak localization induced by disorder in thin films of Gd doped ZnO (Gd:ZnO) deposited by pulsed laser deposition (PLD). Disorder parameter (Kfl) of all the Gd:ZnO thin films was found to be greater than 1, which indicates that thin films of Gd:ZnO in this study are in metallic side...

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Veröffentlicht in:	Physica. B, Condensed matter Condensed matter, 2021-10, Vol.619, p.413218, Article 413218
Hauptverfasser:	Ajimsha, R.S., Das, A.K., Sahu, V.K., Misra, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Coherence length Conductivity Electrical resistivity Gadolinium Insulators Localization Low temperature Magnetoresistance Magnetoresistivity Measurement Metal-insulator transition PLD Pulsed laser deposition Pulsed lasers Temperature Temperature dependence Thin films Zinc oxide Zinc oxides ZnO
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