Si/Zn x Cd1- x Te heterostructures with different Zn contents: growth, electrical and photoelectrical properties

The Zn x Cd1-x Te films with x = 0 ÷ 0.97 are grown by vacuum deposition in quasiequilibrium conditions on single crystal Si (111) substrates. The details of the growth process were analyzed. The possibilities of the quasi-closed volume method for producing high quality homogeneous layers of solid s...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. Conference series 2016-02, Vol.690 (1)
Hauptverfasser:	Yagunov, A P, Gavrikova, T A, Zykov, V A, Polukhin, I S
Format:	Artikel
Sprache:	eng
Schlagworte:	Cadmium tellurides Condensates Converters Heterostructures Photoelectricity Photosensitivity Physics Production methods Silicon substrates Single crystals Solar energy conversion Solid solutions Structural stability Thermal cycling Vacuum deposition Zinc
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!