Ambipolar Channel p‐TMD/n‐Ga2O3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel

Highly crystalline 2D/3D‐mixed p‐transition metal dichalcogenide (TMD)/n‐Ga2O3 heterojunction devices are fabricated by mechanical exfoliation of each p‐ and n‐type material. N‐type β‐Ga2O3 and p‐type TMD separately play as a channel for junction field effect transistors (JFETs) with each type of ca...

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Veröffentlicht in:	Advanced materials (Weinheim) 2021-09, Vol.33 (38), p.n/a
Hauptverfasser:	Choi, Wonjun, Ahn, Jongtae, Kim, Ki‐Tae, Jin, Hye‐Jin, Hong, Sungjae, Hwang, Do Kyung, Im, Seongil
Format:	Artikel
Sprache:	eng
Schlagworte:	ambipolar channels Computer architecture Energy bands Energy gap Field effect transistors Ga 2O 3 Gallium oxides Heterojunction devices High speed JFET junction field effect transistors Materials science Near infrared radiation Photoelectricity photo‐sensing Semiconductor devices Switching Transistors Transition metal compounds transition metal dichalcogenide
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