Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm
We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate w...
Gespeichert in:
| Veröffentlicht in: | Journal of physics. Conference series 2017-11, Vol.917 (5), p.52021 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 5 |
| container_start_page | 52021 |
| container_title | Journal of physics. Conference series |
| container_volume | 917 |
| creator | Kolodeznyi, E S Novikov, I I Babichev, A V Kurochkin, A S Gladyshev, A G Karachinsky, L Ya Gadzhiev, I M Buyalo, M S Usikova, A A Ilynskaya, N D Bougrov, V E Egorov, A Yu |
| description | We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps. |
| doi_str_mv | 10.1088/1742-6596/917/5/052021 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2574471604</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2574471604</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-acb3b61d5bd949690091ed778a3933f12773f28e07bfe97b9eece551521f58f53</originalsourceid><addsrcrecordid>eNqFkEtLxDAQgIMouK7-BSl48lCbR9M0R1l8suCCeg5tOnG7tk1NWhf_vVkqiiA4lxlmvpmBD6FTgi8IzvOEiJTGGZdZIolIeII5xZTsodn3YP-7zvNDdOT9BmMWQszQarW2vl9bN_rYOICotRXEjdWvUEUe2lrbrhr1YF3UFB5ctK2HdRT63te2i7bFOzTQvYQe4RxHXXuMDkzReDj5ynP0fH31tLiNlw83d4vLZawZ50Nc6JKVGal4WclUZhJjSaASIi-YZMwQKgQzNAcsSgNSlBJAA-eEU2J4bjibo7Ppbu_s2wh-UBs7ui68VJSLNBUkw2mgsonSznrvwKje1W3hPhTBamdP7cSonSQV7CmuJnth8XxarG3_c_l-tXj8xam-MoGlf7D_PPgEKep-UA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2574471604</pqid></control><display><type>article</type><title>Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm</title><source>IOP Publishing Free Content</source><source>EZB-FREE-00999 freely available EZB journals</source><source>IOPscience extra</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Kolodeznyi, E S ; Novikov, I I ; Babichev, A V ; Kurochkin, A S ; Gladyshev, A G ; Karachinsky, L Ya ; Gadzhiev, I M ; Buyalo, M S ; Usikova, A A ; Ilynskaya, N D ; Bougrov, V E ; Egorov, A Yu</creator><creatorcontrib>Kolodeznyi, E S ; Novikov, I I ; Babichev, A V ; Kurochkin, A S ; Gladyshev, A G ; Karachinsky, L Ya ; Gadzhiev, I M ; Buyalo, M S ; Usikova, A A ; Ilynskaya, N D ; Bougrov, V E ; Egorov, A Yu</creatorcontrib><description>We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/917/5/052021</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Crystal lattices ; Heterostructures ; Indium gallium arsenides ; Laser mode locking ; Lasers ; Optical pulses ; Physics ; Pulse duration ; Pulse repetition rate ; Quantum wells ; Semiconductor lasers ; Timing jitter ; Vibration</subject><ispartof>Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52021</ispartof><rights>Published under licence by IOP Publishing Ltd</rights><rights>2017. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c355t-acb3b61d5bd949690091ed778a3933f12773f28e07bfe97b9eece551521f58f53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1742-6596/917/5/052021/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,776,780,27901,27902,38845,38867,53815,53842</link.rule.ids></links><search><creatorcontrib>Kolodeznyi, E S</creatorcontrib><creatorcontrib>Novikov, I I</creatorcontrib><creatorcontrib>Babichev, A V</creatorcontrib><creatorcontrib>Kurochkin, A S</creatorcontrib><creatorcontrib>Gladyshev, A G</creatorcontrib><creatorcontrib>Karachinsky, L Ya</creatorcontrib><creatorcontrib>Gadzhiev, I M</creatorcontrib><creatorcontrib>Buyalo, M S</creatorcontrib><creatorcontrib>Usikova, A A</creatorcontrib><creatorcontrib>Ilynskaya, N D</creatorcontrib><creatorcontrib>Bougrov, V E</creatorcontrib><creatorcontrib>Egorov, A Yu</creatorcontrib><title>Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm</title><title>Journal of physics. Conference series</title><addtitle>J. Phys.: Conf. Ser</addtitle><description>We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.</description><subject>Crystal lattices</subject><subject>Heterostructures</subject><subject>Indium gallium arsenides</subject><subject>Laser mode locking</subject><subject>Lasers</subject><subject>Optical pulses</subject><subject>Physics</subject><subject>Pulse duration</subject><subject>Pulse repetition rate</subject><subject>Quantum wells</subject><subject>Semiconductor lasers</subject><subject>Timing jitter</subject><subject>Vibration</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>BENPR</sourceid><recordid>eNqFkEtLxDAQgIMouK7-BSl48lCbR9M0R1l8suCCeg5tOnG7tk1NWhf_vVkqiiA4lxlmvpmBD6FTgi8IzvOEiJTGGZdZIolIeII5xZTsodn3YP-7zvNDdOT9BmMWQszQarW2vl9bN_rYOICotRXEjdWvUEUe2lrbrhr1YF3UFB5ctK2HdRT63te2i7bFOzTQvYQe4RxHXXuMDkzReDj5ynP0fH31tLiNlw83d4vLZawZ50Nc6JKVGal4WclUZhJjSaASIi-YZMwQKgQzNAcsSgNSlBJAA-eEU2J4bjibo7Ppbu_s2wh-UBs7ui68VJSLNBUkw2mgsonSznrvwKje1W3hPhTBamdP7cSonSQV7CmuJnth8XxarG3_c_l-tXj8xam-MoGlf7D_PPgEKep-UA</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Kolodeznyi, E S</creator><creator>Novikov, I I</creator><creator>Babichev, A V</creator><creator>Kurochkin, A S</creator><creator>Gladyshev, A G</creator><creator>Karachinsky, L Ya</creator><creator>Gadzhiev, I M</creator><creator>Buyalo, M S</creator><creator>Usikova, A A</creator><creator>Ilynskaya, N D</creator><creator>Bougrov, V E</creator><creator>Egorov, A Yu</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20171101</creationdate><title>Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm</title><author>Kolodeznyi, E S ; Novikov, I I ; Babichev, A V ; Kurochkin, A S ; Gladyshev, A G ; Karachinsky, L Ya ; Gadzhiev, I M ; Buyalo, M S ; Usikova, A A ; Ilynskaya, N D ; Bougrov, V E ; Egorov, A Yu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-acb3b61d5bd949690091ed778a3933f12773f28e07bfe97b9eece551521f58f53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Crystal lattices</topic><topic>Heterostructures</topic><topic>Indium gallium arsenides</topic><topic>Laser mode locking</topic><topic>Lasers</topic><topic>Optical pulses</topic><topic>Physics</topic><topic>Pulse duration</topic><topic>Pulse repetition rate</topic><topic>Quantum wells</topic><topic>Semiconductor lasers</topic><topic>Timing jitter</topic><topic>Vibration</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kolodeznyi, E S</creatorcontrib><creatorcontrib>Novikov, I I</creatorcontrib><creatorcontrib>Babichev, A V</creatorcontrib><creatorcontrib>Kurochkin, A S</creatorcontrib><creatorcontrib>Gladyshev, A G</creatorcontrib><creatorcontrib>Karachinsky, L Ya</creatorcontrib><creatorcontrib>Gadzhiev, I M</creatorcontrib><creatorcontrib>Buyalo, M S</creatorcontrib><creatorcontrib>Usikova, A A</creatorcontrib><creatorcontrib>Ilynskaya, N D</creatorcontrib><creatorcontrib>Bougrov, V E</creatorcontrib><creatorcontrib>Egorov, A Yu</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kolodeznyi, E S</au><au>Novikov, I I</au><au>Babichev, A V</au><au>Kurochkin, A S</au><au>Gladyshev, A G</au><au>Karachinsky, L Ya</au><au>Gadzhiev, I M</au><au>Buyalo, M S</au><au>Usikova, A A</au><au>Ilynskaya, N D</au><au>Bougrov, V E</au><au>Egorov, A Yu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm</atitle><jtitle>Journal of physics. Conference series</jtitle><addtitle>J. Phys.: Conf. Ser</addtitle><date>2017-11-01</date><risdate>2017</risdate><volume>917</volume><issue>5</issue><spage>52021</spage><pages>52021-</pages><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>We have fabricated passive mode-locked laser diodes based on strained InGaAlAs/InGaAs/InP heterostructures with crystal lattice mismatch parameter of +1.0 % between quantum well and barrier. The laser with temperature stabilization at 18 °C was demonstrated 10.027 GHz optical pulse repetition rate with 6 ps pulse duration time. Timing jitter of optical pulses in mode-locked regime was 0.145 ps.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/917/5/052021</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1742-6588 |
| ispartof | Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52021 |
| issn | 1742-6588 1742-6596 |
| language | eng |
| recordid | cdi_proquest_journals_2574471604 |
| source | IOP Publishing Free Content; EZB-FREE-00999 freely available EZB journals; IOPscience extra; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | Crystal lattices Heterostructures Indium gallium arsenides Laser mode locking Lasers Optical pulses Physics Pulse duration Pulse repetition rate Quantum wells Semiconductor lasers Timing jitter Vibration |
| title | Phosphorus-free mode-locked semiconductor laser with emission wavelength 1550 nm |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T14%3A52%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Phosphorus-free%20mode-locked%20semiconductor%20laser%20with%20emission%20wavelength%201550%20nm&rft.jtitle=Journal%20of%20physics.%20Conference%20series&rft.au=Kolodeznyi,%20E%20S&rft.date=2017-11-01&rft.volume=917&rft.issue=5&rft.spage=52021&rft.pages=52021-&rft.issn=1742-6588&rft.eissn=1742-6596&rft_id=info:doi/10.1088/1742-6596/917/5/052021&rft_dat=%3Cproquest_cross%3E2574471604%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2574471604&rft_id=info:pmid/&rfr_iscdi=true |