Iron ions distribution profile obtained by irradiating the silicon single crystal
Iron ions with energies of 90 and 250 keV and the irradiation dose of 1016 ions/cm2 and xenon ions with energies of 100 keV and dose 7,7×1014 cm-2, 200 keV and dose 2,6 × 1014 cm-2 were implanted in the single crystal of silicon (110). The distribution profiles of implanted impurity, as well as the...
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| Veröffentlicht in: | Journal of physics. Conference series 2017-11, Vol.917 (9), p.92024 |
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| creator | Shemukhin, A A Kozhemiako, A V Balakshin, Y V Chernysh, V S |
| description | Iron ions with energies of 90 and 250 keV and the irradiation dose of 1016 ions/cm2 and xenon ions with energies of 100 keV and dose 7,7×1014 cm-2, 200 keV and dose 2,6 × 1014 cm-2 were implanted in the single crystal of silicon (110). The distribution profiles of implanted impurity, as well as the distribution profiles of the radiation defects in the crystal lattice, were studied by the Rutherford backscattering method in combination with channeling. The experimental results were compared with the results of simulations of binary collisions of the Monte Carlo method in the TRIM program. It is shown that the difference between the experimental data and the calculation program TRIM is more than 35% in all cases. |
| doi_str_mv | 10.1088/1742-6596/917/9/092024 |
| format | Article |
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The distribution profiles of implanted impurity, as well as the distribution profiles of the radiation defects in the crystal lattice, were studied by the Rutherford backscattering method in combination with channeling. The experimental results were compared with the results of simulations of binary collisions of the Monte Carlo method in the TRIM program. It is shown that the difference between the experimental data and the calculation program TRIM is more than 35% in all cases.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/917/9/092024</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Backscattering ; Crystal defects ; Crystal lattices ; Iron ; Monte Carlo simulation ; Physics ; Radiation damage ; Radiation dosage ; Silicon ; Single crystals ; Xenon</subject><ispartof>Journal of physics. 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The distribution profiles of implanted impurity, as well as the distribution profiles of the radiation defects in the crystal lattice, were studied by the Rutherford backscattering method in combination with channeling. The experimental results were compared with the results of simulations of binary collisions of the Monte Carlo method in the TRIM program. It is shown that the difference between the experimental data and the calculation program TRIM is more than 35% in all cases.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/917/9/092024</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Backscattering Crystal defects Crystal lattices Iron Monte Carlo simulation Physics Radiation damage Radiation dosage Silicon Single crystals Xenon |
| title | Iron ions distribution profile obtained by irradiating the silicon single crystal |
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