In3+ doped ZnGa2O4 nanoparticles: Difference in the luminescence properties upon optical and electrical excitations

•ZnGa2O4 nanoparticles having size less than 10 nm were prepared and characterized.•In3+ doping leads to the tuning of emission wavelength in photoluminescence.•AC powder electroluminescent devices fabricated from these nanoparticles.•Electroluminescence line shape and λmax are unaffected by In3+dop...

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Veröffentlicht in:	Journal of alloys and compounds 2021-12, Vol.884, p.161021, Article 161021
Hauptverfasser:	Patel, Dinesh K., Girija, K.G., Naidu, Boddu S., Vishwanadh, B., Sayed, Farheen N., Vatsa, R.K., Sudarsan, V., Kulshreshtha, S.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Binomial distribution Doping Electric fields Electroluminescence Excitation Indium doping Low temperature Luminescence Nanoparticles Optical properties Photoluminescence X-ray diffraction Zinc gallate
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