The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate
The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emit...
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| Veröffentlicht in: | Journal of physics. Conference series 2017-11, Vol.929 (1), p.12047 |
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| container_title | Journal of physics. Conference series |
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| creator | Reznik, R R Shtrom, I V Samsonenko, Yu B Khrebtov, A I Soshnikov, I P Cirlin, G E |
| description | The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform. |
| doi_str_mv | 10.1088/1742-6596/929/1/012047 |
| format | Article |
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| subjects | Aluminum gallium arsenides Epitaxial growth Gallium arsenide Molecular beam epitaxy Nanowires Parameters Physical properties Physics Quantum dots Silicon substrates |
| title | The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate |
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