Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

The impact of O2 plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O2 plasma treatment. The uniformity of O2 plasma sample is better than control sampl...

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Veröffentlicht in:	Surface & coatings technology 2021-09, Vol.422, p.127539, Article 127539
Hauptverfasser:	Hsu, Chih-Chieh, Liu, Po-Tsun, Gan, Kai-Jhih, Ruan, Dun-Bao, Chiu, Yu-Chuan, Sze, Simon M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductive-bridge RAM (CBRAM) Electric potential Endurance Indium-tungsten-zinc oxide (IWZO) Oxygen plasma Oxygen-rich oxide Plasma Random access memory Remote oxygen plasma Surface modification Switching Voltage
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