Anti-Reflection Properties of Black Silicon Coated with Thin Films of Metal Oxides by Atomic Layer Deposition

The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO 2 , HfO 2 , and Sc 2 O 3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection properties of b-Si in a wide spectral range is...

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Veröffentlicht in:	Journal of contemporary physics 2021-07, Vol.56 (3), p.240-246
Hauptverfasser:	Ayvazyan, G. Y., Katkov, M. V., Lebedev, M. S., Shayapov, V. R., Afonin, M. Yu, Petukhova, D. E., Yushina, I. V., Maksimovskii, E. A., Aghabekyan, A. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer epitaxy Metal oxides Particle and Nuclear Physics Photovoltaic cells Physics Physics and Astronomy Scandium oxides Silicon Solar cells Thin films Titanium dioxide
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Beschreibung
Zusammenfassung:	The results of experimental studies of the anti-reflection properties of black silicon (b-Si) layers coated with thin films of TiO 2 , HfO 2 , and Sc 2 O 3 metal oxides by atomic layer deposition (ALD) are presented. An improvement in the antireflection properties of b-Si in a wide spectral range is shown. It is expedient to use the investigated ALD films in solar cells as an effective passivating coating of the b-Si surface.
ISSN:	1068-3372 1934-9378
DOI:	10.3103/S1068337221030075