Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures
In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the...
Gespeichert in:
| Veröffentlicht in: | Microelectronic engineering 2021-07, Vol.247, p.111594, Article 111594 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | 111594 |
| container_title | Microelectronic engineering |
| container_volume | 247 |
| creator | Liu, Yan Chen, Simin Lin, Zhaojun Jiang, Guangyuan Wang, Tao |
| description | In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the ratio of LG to LGD had a significant effect on RGS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of LG to LGD on RGS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of LG to LGD based on PCF scattering.
[Display omitted]
•The effects of the ratio of LG to LGD on RGS in AlGaN/AlN/GaN HFETs are investigated at different temperatures.•It is found that the ratio of LG to LGD has a significant effect on RGS at each testing temperature.•PCF scattering is responsible for the effects of the ratio of LG to LGD on RGS.•RGS can be modulated by optimizing the ratio of LG to LGD based on PCF scattering. |
| doi_str_mv | 10.1016/j.mee.2021.111594 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2573021989</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167931721000964</els_id><sourcerecordid>2573021989</sourcerecordid><originalsourceid>FETCH-LOGICAL-c325t-98ee0015e9555456532199792994b3fec67d7ae4ef75c373566aae1b3ad09e803</originalsourceid><addsrcrecordid>eNp9kEFOwzAQRS0EEqVwAHaWWCeN4ziOxaqqoEWqygbWlptMiqM0LraDxDG4MVMKW1YzY_33x_MJuWVZyjJWzrp0D5DmWc5SxphQxRmZsEryRIiyOicT1MhEcSYvyVUIXYZzkVUT8rVw-4PxNriBupZ6E607NjsTgfYw7OIbje5nTBpv7EAbG6IZaqB2aPsRsAsU4eBGj4-mxjlQD-FPhmbzfmk2s3m_mWGlq8eHl0BNRKe2BQ9DpBH2B8DdI3LX5KI1fYCb3zolrwgsVsn6efm0mK-TmuciJqoCwCsEKCFEIUrBc6aUVLlSxZa3UJeykQYKaKWoueSiLI0BtuWmyRRUGZ-Su5Pvwbv3EULUHZ4w4EqdC8kxSVUpVLGTqvYuBA-tPni7N_5Ts0wfk9edxuT1MXl9Sh6Z-xMD-P0PC16H2h6DaqyHOurG2X_ob2Pni-4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2573021989</pqid></control><display><type>article</type><title>Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures</title><source>Elsevier ScienceDirect Journals</source><creator>Liu, Yan ; Chen, Simin ; Lin, Zhaojun ; Jiang, Guangyuan ; Wang, Tao</creator><creatorcontrib>Liu, Yan ; Chen, Simin ; Lin, Zhaojun ; Jiang, Guangyuan ; Wang, Tao</creatorcontrib><description>In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the ratio of LG to LGD had a significant effect on RGS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of LG to LGD on RGS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of LG to LGD based on PCF scattering.
[Display omitted]
•The effects of the ratio of LG to LGD on RGS in AlGaN/AlN/GaN HFETs are investigated at different temperatures.•It is found that the ratio of LG to LGD has a significant effect on RGS at each testing temperature.•PCF scattering is responsible for the effects of the ratio of LG to LGD on RGS.•RGS can be modulated by optimizing the ratio of LG to LGD based on PCF scattering.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2021.111594</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AlGaN/AlN/GaN HFETs ; Aluminum gallium nitrides ; Aluminum nitride ; Field effect transistors ; Gallium nitrides ; Heat transfer ; Heterostructures ; Polarization Coulomb field scattering ; Ratio of gate length to gate-drain distance ; Scattering ; Semiconductor devices ; Source access resistance under varying temperatures ; Studies ; Temperature ; Transistors</subject><ispartof>Microelectronic engineering, 2021-07, Vol.247, p.111594, Article 111594</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jul 15, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c325t-98ee0015e9555456532199792994b3fec67d7ae4ef75c373566aae1b3ad09e803</citedby><cites>FETCH-LOGICAL-c325t-98ee0015e9555456532199792994b3fec67d7ae4ef75c373566aae1b3ad09e803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167931721000964$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Liu, Yan</creatorcontrib><creatorcontrib>Chen, Simin</creatorcontrib><creatorcontrib>Lin, Zhaojun</creatorcontrib><creatorcontrib>Jiang, Guangyuan</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><title>Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures</title><title>Microelectronic engineering</title><description>In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the ratio of LG to LGD had a significant effect on RGS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of LG to LGD on RGS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of LG to LGD based on PCF scattering.
[Display omitted]
•The effects of the ratio of LG to LGD on RGS in AlGaN/AlN/GaN HFETs are investigated at different temperatures.•It is found that the ratio of LG to LGD has a significant effect on RGS at each testing temperature.•PCF scattering is responsible for the effects of the ratio of LG to LGD on RGS.•RGS can be modulated by optimizing the ratio of LG to LGD based on PCF scattering.</description><subject>AlGaN/AlN/GaN HFETs</subject><subject>Aluminum gallium nitrides</subject><subject>Aluminum nitride</subject><subject>Field effect transistors</subject><subject>Gallium nitrides</subject><subject>Heat transfer</subject><subject>Heterostructures</subject><subject>Polarization Coulomb field scattering</subject><subject>Ratio of gate length to gate-drain distance</subject><subject>Scattering</subject><subject>Semiconductor devices</subject><subject>Source access resistance under varying temperatures</subject><subject>Studies</subject><subject>Temperature</subject><subject>Transistors</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEFOwzAQRS0EEqVwAHaWWCeN4ziOxaqqoEWqygbWlptMiqM0LraDxDG4MVMKW1YzY_33x_MJuWVZyjJWzrp0D5DmWc5SxphQxRmZsEryRIiyOicT1MhEcSYvyVUIXYZzkVUT8rVw-4PxNriBupZ6E607NjsTgfYw7OIbje5nTBpv7EAbG6IZaqB2aPsRsAsU4eBGj4-mxjlQD-FPhmbzfmk2s3m_mWGlq8eHl0BNRKe2BQ9DpBH2B8DdI3LX5KI1fYCb3zolrwgsVsn6efm0mK-TmuciJqoCwCsEKCFEIUrBc6aUVLlSxZa3UJeykQYKaKWoueSiLI0BtuWmyRRUGZ-Su5Pvwbv3EULUHZ4w4EqdC8kxSVUpVLGTqvYuBA-tPni7N_5Ts0wfk9edxuT1MXl9Sh6Z-xMD-P0PC16H2h6DaqyHOurG2X_ob2Pni-4</recordid><startdate>20210715</startdate><enddate>20210715</enddate><creator>Liu, Yan</creator><creator>Chen, Simin</creator><creator>Lin, Zhaojun</creator><creator>Jiang, Guangyuan</creator><creator>Wang, Tao</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20210715</creationdate><title>Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures</title><author>Liu, Yan ; Chen, Simin ; Lin, Zhaojun ; Jiang, Guangyuan ; Wang, Tao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c325t-98ee0015e9555456532199792994b3fec67d7ae4ef75c373566aae1b3ad09e803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>AlGaN/AlN/GaN HFETs</topic><topic>Aluminum gallium nitrides</topic><topic>Aluminum nitride</topic><topic>Field effect transistors</topic><topic>Gallium nitrides</topic><topic>Heat transfer</topic><topic>Heterostructures</topic><topic>Polarization Coulomb field scattering</topic><topic>Ratio of gate length to gate-drain distance</topic><topic>Scattering</topic><topic>Semiconductor devices</topic><topic>Source access resistance under varying temperatures</topic><topic>Studies</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yan</creatorcontrib><creatorcontrib>Chen, Simin</creatorcontrib><creatorcontrib>Lin, Zhaojun</creatorcontrib><creatorcontrib>Jiang, Guangyuan</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yan</au><au>Chen, Simin</au><au>Lin, Zhaojun</au><au>Jiang, Guangyuan</au><au>Wang, Tao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures</atitle><jtitle>Microelectronic engineering</jtitle><date>2021-07-15</date><risdate>2021</risdate><volume>247</volume><spage>111594</spage><pages>111594-</pages><artnum>111594</artnum><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>In this work, two AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different ratios of gate length (LG) to gate-drain distance (LGD) were used to compare the effects of ratio of LG to LGD on the source access resistance (RGS) at 300 K, 350 K, and 400 K. The results showed that the ratio of LG to LGD had a significant effect on RGS at the above-mentioned each temperature, which can be attributed to the polarization Coulomb field (PCF) scattering. In addition, the effects of the ratio of LG to LGD on RGS in the two AlGaN/AlN/GaN HFETs prepared in this work were different at different temperatures. This indicated that elevated-temperature performance of AlGaN/AlN/GaN HFETs can be improved by optimizing the ratio of LG to LGD based on PCF scattering.
[Display omitted]
•The effects of the ratio of LG to LGD on RGS in AlGaN/AlN/GaN HFETs are investigated at different temperatures.•It is found that the ratio of LG to LGD has a significant effect on RGS at each testing temperature.•PCF scattering is responsible for the effects of the ratio of LG to LGD on RGS.•RGS can be modulated by optimizing the ratio of LG to LGD based on PCF scattering.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2021.111594</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0167-9317 |
| ispartof | Microelectronic engineering, 2021-07, Vol.247, p.111594, Article 111594 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_journals_2573021989 |
| source | Elsevier ScienceDirect Journals |
| subjects | AlGaN/AlN/GaN HFETs Aluminum gallium nitrides Aluminum nitride Field effect transistors Gallium nitrides Heat transfer Heterostructures Polarization Coulomb field scattering Ratio of gate length to gate-drain distance Scattering Semiconductor devices Source access resistance under varying temperatures Studies Temperature Transistors |
| title | Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T15%3A08%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparison%20of%20ratio%20of%20gate%20length%20to%20gate-drain%20distance%20influences%20on%20source%20access%20resistance%20of%20AlGaN/AlN/GaN%20HFETs%20at%20different%20temperatures&rft.jtitle=Microelectronic%20engineering&rft.au=Liu,%20Yan&rft.date=2021-07-15&rft.volume=247&rft.spage=111594&rft.pages=111594-&rft.artnum=111594&rft.issn=0167-9317&rft.eissn=1873-5568&rft_id=info:doi/10.1016/j.mee.2021.111594&rft_dat=%3Cproquest_cross%3E2573021989%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2573021989&rft_id=info:pmid/&rft_els_id=S0167931721000964&rfr_iscdi=true |