Alternatives to aluminum gates for silicon quantum devices: Defects and strain

Gate-defined quantum dots benefit from the use of small grain size metals for gate materials because they aid in shrinking the device dimensions. However, it is not clear what differences arise with respect to process-induced defect densities and inhomogeneous strain. Here, we present measurements o...

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Veröffentlicht in:	Journal of applied physics 2021-09, Vol.130 (11)
Hauptverfasser:	Stein, Ryan M., Barcikowski, Z. S., Pookpanratana, S. J., Pomeroy, J. M., Stewart, M. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Annealing Applied physics Charge density Crystal defects Grain size Palladium Platinum Quantum dots Thermal expansion Titanium
Online-Zugang:	Volltext
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