Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. Conference series 2018-06, Vol.1038 (1), p.12036
Hauptverfasser:	Smirnov, A A, Shevchenko, S A, Ivanov, B V, Ilyin, V A, Afanasyev, A V
Format:	Artikel
Sprache:	eng
Schlagworte:	High temperature Physics Silicon carbide Step recovery diodes Switches Temperature effects
Online-Zugang:	Volltext
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