Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches
The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.
Gespeichert in:
| Veröffentlicht in: | Journal of physics. Conference series 2018-06, Vol.1038 (1), p.12036 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 1 |
| container_start_page | 12036 |
| container_title | Journal of physics. Conference series |
| container_volume | 1038 |
| creator | Smirnov, A A Shevchenko, S A Ivanov, B V Ilyin, V A Afanasyev, A V |
| description | The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated. |
| doi_str_mv | 10.1088/1742-6596/1038/1/012036 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2572331880</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2572331880</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-600ecfedd8e97d4e335bcaa51237f67fd0f120373a07c18148885b824b6040ac3</originalsourceid><addsrcrecordid>eNqFkF1LwzAUhoMoOKe_wYB3Ql3StE12KcOPyUBBvQ5peuIy1g-TVNm_N6UyEQRzk5y8z3sO50XonJIrSoSYUZ6lSZHPixklLJYzQlPCigM02SuH-7cQx-jE-w0hLB4-Qe2y-QAf7JsKtm1wa3BYAw5Qd-BU6B1gMAZ0wFEclGrXqNpq3Cmnagjg_ODpt8Epo3zA3m6tjqxWrrQVYN07B038_7RBr8GfoiOjth7Ovu8per29eVncJ6vHu-XiepVols9DUhAC2kBVCZjzKgPG8lIrldOUcVNwUxEzbMmZIlxTQTMhRF6KNCsLkhGl2RRdjH071773cUO5aXvXxJEyzXnKGBWCRIqPlHat9w6M7JytldtJSuSQrhxyk0OGckhXUjmmG52Xo9O23U_rh6fF829QdpWJMPsD_m_EF4mki2w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2572331880</pqid></control><display><type>article</type><title>Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches</title><source>IOP Publishing Free Content</source><source>EZB-FREE-00999 freely available EZB journals</source><source>IOPscience extra</source><source>Alma/SFX Local Collection</source><source>Free Full-Text Journals in Chemistry</source><creator>Smirnov, A A ; Shevchenko, S A ; Ivanov, B V ; Ilyin, V A ; Afanasyev, A V</creator><creatorcontrib>Smirnov, A A ; Shevchenko, S A ; Ivanov, B V ; Ilyin, V A ; Afanasyev, A V</creatorcontrib><description>The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.</description><identifier>ISSN: 1742-6588</identifier><identifier>EISSN: 1742-6596</identifier><identifier>DOI: 10.1088/1742-6596/1038/1/012036</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>High temperature ; Physics ; Silicon carbide ; Step recovery diodes ; Switches ; Temperature effects</subject><ispartof>Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12036</ispartof><rights>Published under licence by IOP Publishing Ltd</rights><rights>2018. This work is published under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c359t-600ecfedd8e97d4e335bcaa51237f67fd0f120373a07c18148885b824b6040ac3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/1742-6596/1038/1/012036/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,780,784,27923,27924,38867,38889,53839,53866</link.rule.ids></links><search><creatorcontrib>Smirnov, A A</creatorcontrib><creatorcontrib>Shevchenko, S A</creatorcontrib><creatorcontrib>Ivanov, B V</creatorcontrib><creatorcontrib>Ilyin, V A</creatorcontrib><creatorcontrib>Afanasyev, A V</creatorcontrib><title>Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches</title><title>Journal of physics. Conference series</title><addtitle>J. Phys.: Conf. Ser</addtitle><description>The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.</description><subject>High temperature</subject><subject>Physics</subject><subject>Silicon carbide</subject><subject>Step recovery diodes</subject><subject>Switches</subject><subject>Temperature effects</subject><issn>1742-6588</issn><issn>1742-6596</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqFkF1LwzAUhoMoOKe_wYB3Ql3StE12KcOPyUBBvQ5peuIy1g-TVNm_N6UyEQRzk5y8z3sO50XonJIrSoSYUZ6lSZHPixklLJYzQlPCigM02SuH-7cQx-jE-w0hLB4-Qe2y-QAf7JsKtm1wa3BYAw5Qd-BU6B1gMAZ0wFEclGrXqNpq3Cmnagjg_ODpt8Epo3zA3m6tjqxWrrQVYN07B038_7RBr8GfoiOjth7Ovu8per29eVncJ6vHu-XiepVols9DUhAC2kBVCZjzKgPG8lIrldOUcVNwUxEzbMmZIlxTQTMhRF6KNCsLkhGl2RRdjH071773cUO5aXvXxJEyzXnKGBWCRIqPlHat9w6M7JytldtJSuSQrhxyk0OGckhXUjmmG52Xo9O23U_rh6fF829QdpWJMPsD_m_EF4mki2w</recordid><startdate>20180601</startdate><enddate>20180601</enddate><creator>Smirnov, A A</creator><creator>Shevchenko, S A</creator><creator>Ivanov, B V</creator><creator>Ilyin, V A</creator><creator>Afanasyev, A V</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>H8D</scope><scope>HCIFZ</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope></search><sort><creationdate>20180601</creationdate><title>Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches</title><author>Smirnov, A A ; Shevchenko, S A ; Ivanov, B V ; Ilyin, V A ; Afanasyev, A V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-600ecfedd8e97d4e335bcaa51237f67fd0f120373a07c18148885b824b6040ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>High temperature</topic><topic>Physics</topic><topic>Silicon carbide</topic><topic>Step recovery diodes</topic><topic>Switches</topic><topic>Temperature effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smirnov, A A</creatorcontrib><creatorcontrib>Shevchenko, S A</creatorcontrib><creatorcontrib>Ivanov, B V</creatorcontrib><creatorcontrib>Ilyin, V A</creatorcontrib><creatorcontrib>Afanasyev, A V</creatorcontrib><collection>IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>Aerospace Database</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of physics. Conference series</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Smirnov, A A</au><au>Shevchenko, S A</au><au>Ivanov, B V</au><au>Ilyin, V A</au><au>Afanasyev, A V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches</atitle><jtitle>Journal of physics. Conference series</jtitle><addtitle>J. Phys.: Conf. Ser</addtitle><date>2018-06-01</date><risdate>2018</risdate><volume>1038</volume><issue>1</issue><spage>12036</spage><pages>12036-</pages><issn>1742-6588</issn><eissn>1742-6596</eissn><abstract>The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/1742-6596/1038/1/012036</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1742-6588 |
| ispartof | Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12036 |
| issn | 1742-6588 1742-6596 |
| language | eng |
| recordid | cdi_proquest_journals_2572331880 |
| source | IOP Publishing Free Content; EZB-FREE-00999 freely available EZB journals; IOPscience extra; Alma/SFX Local Collection; Free Full-Text Journals in Chemistry |
| subjects | High temperature Physics Silicon carbide Step recovery diodes Switches Temperature effects |
| title | Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T14%3A18%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20the%20temperature%20effect%20on%20the%20dynamic%20parameters%20of%20ultrafast%20silicon%20carbide%20current%20switches&rft.jtitle=Journal%20of%20physics.%20Conference%20series&rft.au=Smirnov,%20A%20A&rft.date=2018-06-01&rft.volume=1038&rft.issue=1&rft.spage=12036&rft.pages=12036-&rft.issn=1742-6588&rft.eissn=1742-6596&rft_id=info:doi/10.1088/1742-6596/1038/1/012036&rft_dat=%3Cproquest_cross%3E2572331880%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2572331880&rft_id=info:pmid/&rfr_iscdi=true |