Study the existing form of copper (p-type oxide/segregation) and its release mechanism from the passive film of Ti-7Cu alloy

•Ti-xCu alloys have n-type point defective TiO2-x barrier layer.•Copper does not form any p-type (cuprous or cupric) oxide.•Cu preferentially oxidizes at the m/f interface and dissolves at the f/s interface. The existing form of copper and its release mechanism from the passive film of Ti-7Cu alloy...

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Veröffentlicht in:	Corrosion science 2021-09, Vol.190, p.109693, Article 109693
Hauptverfasser:	Siddiqui, Muhammad Ali, Ullah, Ihsan, Kolawole, Sharafadeen Kunle, Peng, Cong, Wang, Jiewen, Ren, Ling, Yang, Ke, Macdonald, Digby D.
Format:	Artikel
Sprache:	eng
Schlagworte:	A. Ti-7Cu B. Electrochemical Barrier layers C. ARXPS C. Point defect model C. Quantitative analysis C. Segregation of Cu in the passive film Copper Interstitials N-type semiconductors Point defects Titanium base alloys Titanium dioxide
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