Comparative studies of metal‐organic decomposed GaxCeyOz and CeO2 based functional MOS capacitor

Summary A comparison between metal‐organic decomposed GaxCeyOz and CeO2 passivation layers subjected to post‐deposition annealing at 800°C in oxygen ambient was presented. Mitigation in the formation of positively charged oxygen vacancies in GaxCeyOz layer was disclosed by the grazing incidence X‐ray diffraction characterization as well as the acquisition of a lower value of positive effective oxide charge (Qeff) than CeO2 layer. In addition, GaxCeyOz layer was able to sustain a higher electric breakdown field and a lower leakage current density due to the attainment of a lower interface trap density extracted using Terman's and high‐low methods, slow trap density, and Qeff when compared with CeO2 layer. A novel metal‐organic decomposed GaxCeyOz was formed as a high dielectric constant (k) metal oxide for employment in silicon‐based metal‐oxide‐semiconductor (MOS) devices. A comparison study between GaxCeyOz and CeO2 passivation layers were studied in term of effective oxide charge, slow trap density, and interface trap density governing the leakage current density as well as electric breakdown field of the investigated layers. An improvement in interface quality was attained using novel GaxCeyOz passivation layers through the acquisition of a lower interface trap density calculated using Terman's method and also high‐low frequency method.