Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy
GaN crystal growth mode in the oxide vapor phase epitaxy (OVPE) method, which simultaneously provides low electrical resistance and low threading dislocation density (TDD), has been investigated in detail. The results clarified that these qualities can be achieved by the expression of numerous inver...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2021-09, Vol.60 (9), p.95501 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Takino, Junichi Sumi, Tomoaki Okayama, Yoshio Kitamoto, Akira Usami, Shigeyoshi Imanishi, Masayuki Yoshimura, Masashi Mori, Yusuke |
| description | GaN crystal growth mode in the oxide vapor phase epitaxy (OVPE) method, which simultaneously provides low electrical resistance and low threading dislocation density (TDD), has been investigated in detail. The results clarified that these qualities can be achieved by the expression of numerous inverted pyramidal pits, called three-dimensional (3D) growth mode. This mode reduced TDD from 3.8 × 10
6
cm
−2
to 2.0 × 10
4
cm
−2
for 1 mm thick growth because the threading dislocations (TDs) converged to the center of each pit. Moreover, when the crystal surface after polishing was observed by photoluminescence measurement, peculiar floral designs reflecting the distribution of oxygen concentration were observed over the entire surface. In addition, the etch pits exhibited TDs in the center of each floral design. On the basis of our results, we proposed that the 3D-OVPE-GaN will serve as a key material for improving the performance of vertical GaN devices. |
| doi_str_mv | 10.35848/1347-4065/ac1d2f |
| format | Article |
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6
cm
−2
to 2.0 × 10
4
cm
−2
for 1 mm thick growth because the threading dislocations (TDs) converged to the center of each pit. Moreover, when the crystal surface after polishing was observed by photoluminescence measurement, peculiar floral designs reflecting the distribution of oxygen concentration were observed over the entire surface. In addition, the etch pits exhibited TDs in the center of each floral design. On the basis of our results, we proposed that the 3D-OVPE-GaN will serve as a key material for improving the performance of vertical GaN devices.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/ac1d2f</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Crystal dislocations ; Crystal growth ; Crystal surfaces ; Crystals ; Dislocation density ; Epitaxial growth ; Etch pits ; GaN ; growth mode control ; low dislocation density ; low resistance ; Photoluminescence ; power device ; Threading dislocations ; Vapor phase epitaxy ; Vapor phases ; vertical device</subject><ispartof>Japanese Journal of Applied Physics, 2021-09, Vol.60 (9), p.95501</ispartof><rights>2021 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd</rights><rights>Copyright Japanese Journal of Applied Physics Sep 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-2cc7936144eeae2f58d5139d869d152c40118ec870ce37561f7b3e089cc05b13</citedby><cites>FETCH-LOGICAL-c453t-2cc7936144eeae2f58d5139d869d152c40118ec870ce37561f7b3e089cc05b13</cites><orcidid>0000-0001-7536-4683</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.35848/1347-4065/ac1d2f/pdf$$EPDF$$P50$$Giop$$Hfree_for_read</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Takino, Junichi</creatorcontrib><creatorcontrib>Sumi, Tomoaki</creatorcontrib><creatorcontrib>Okayama, Yoshio</creatorcontrib><creatorcontrib>Kitamoto, Akira</creatorcontrib><creatorcontrib>Usami, Shigeyoshi</creatorcontrib><creatorcontrib>Imanishi, Masayuki</creatorcontrib><creatorcontrib>Yoshimura, Masashi</creatorcontrib><creatorcontrib>Mori, Yusuke</creatorcontrib><title>Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>GaN crystal growth mode in the oxide vapor phase epitaxy (OVPE) method, which simultaneously provides low electrical resistance and low threading dislocation density (TDD), has been investigated in detail. The results clarified that these qualities can be achieved by the expression of numerous inverted pyramidal pits, called three-dimensional (3D) growth mode. This mode reduced TDD from 3.8 × 10
6
cm
−2
to 2.0 × 10
4
cm
−2
for 1 mm thick growth because the threading dislocations (TDs) converged to the center of each pit. Moreover, when the crystal surface after polishing was observed by photoluminescence measurement, peculiar floral designs reflecting the distribution of oxygen concentration were observed over the entire surface. In addition, the etch pits exhibited TDs in the center of each floral design. On the basis of our results, we proposed that the 3D-OVPE-GaN will serve as a key material for improving the performance of vertical GaN devices.</description><subject>Crystal dislocations</subject><subject>Crystal growth</subject><subject>Crystal surfaces</subject><subject>Crystals</subject><subject>Dislocation density</subject><subject>Epitaxial growth</subject><subject>Etch pits</subject><subject>GaN</subject><subject>growth mode control</subject><subject>low dislocation density</subject><subject>low resistance</subject><subject>Photoluminescence</subject><subject>power device</subject><subject>Threading dislocations</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><subject>vertical device</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>O3W</sourceid><recordid>eNp9kEtPwzAQhC0EEqXwA7hZ4sLF1M88uKGKFqQKLr1bru20jkIc7PSRf0_aILggTqudnZmVPgBuCX5gIuPZhDCeIo4TMVGaGFqcgdGPdA5GGFOCeE7pJbiKsezXRHAyAm5W-aAqaGx06xrO1RvUoYutquIjrPwehf4QW7ezUNXmpBgXK69V63yNjK2jazu4Dn7fbuCqg_7gjIU71fgAm42KFtrGterQXYOLom-1N99zDJaz5-X0BS3e56_TpwXSXLAWUa3TnCWEc2uVpYXIjCAsN1mSGyKo5piQzOosxdqyVCSkSFfM4izXGosVYWNwN9Q2wX9ubWxl6beh7j9KKpI8yQimvHeRwaWDjzHYQjbBfajQSYLlCag80pNHenIA2mfQkHG--S39z3__h78sVSMTLHOJcyEwkY0p2BfvJ4Yh</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>Takino, Junichi</creator><creator>Sumi, Tomoaki</creator><creator>Okayama, Yoshio</creator><creator>Kitamoto, Akira</creator><creator>Usami, Shigeyoshi</creator><creator>Imanishi, Masayuki</creator><creator>Yoshimura, Masashi</creator><creator>Mori, Yusuke</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7536-4683</orcidid></search><sort><creationdate>20210901</creationdate><title>Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy</title><author>Takino, Junichi ; Sumi, Tomoaki ; Okayama, Yoshio ; Kitamoto, Akira ; Usami, Shigeyoshi ; Imanishi, Masayuki ; Yoshimura, Masashi ; Mori, Yusuke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c453t-2cc7936144eeae2f58d5139d869d152c40118ec870ce37561f7b3e089cc05b13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Crystal dislocations</topic><topic>Crystal growth</topic><topic>Crystal surfaces</topic><topic>Crystals</topic><topic>Dislocation density</topic><topic>Epitaxial growth</topic><topic>Etch pits</topic><topic>GaN</topic><topic>growth mode control</topic><topic>low dislocation density</topic><topic>low resistance</topic><topic>Photoluminescence</topic><topic>power device</topic><topic>Threading dislocations</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><topic>vertical device</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takino, Junichi</creatorcontrib><creatorcontrib>Sumi, Tomoaki</creatorcontrib><creatorcontrib>Okayama, Yoshio</creatorcontrib><creatorcontrib>Kitamoto, Akira</creatorcontrib><creatorcontrib>Usami, Shigeyoshi</creatorcontrib><creatorcontrib>Imanishi, Masayuki</creatorcontrib><creatorcontrib>Yoshimura, Masashi</creatorcontrib><creatorcontrib>Mori, Yusuke</creatorcontrib><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takino, Junichi</au><au>Sumi, Tomoaki</au><au>Okayama, Yoshio</au><au>Kitamoto, Akira</au><au>Usami, Shigeyoshi</au><au>Imanishi, Masayuki</au><au>Yoshimura, Masashi</au><au>Mori, Yusuke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2021-09-01</date><risdate>2021</risdate><volume>60</volume><issue>9</issue><spage>95501</spage><pages>95501-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>GaN crystal growth mode in the oxide vapor phase epitaxy (OVPE) method, which simultaneously provides low electrical resistance and low threading dislocation density (TDD), has been investigated in detail. The results clarified that these qualities can be achieved by the expression of numerous inverted pyramidal pits, called three-dimensional (3D) growth mode. This mode reduced TDD from 3.8 × 10
6
cm
−2
to 2.0 × 10
4
cm
−2
for 1 mm thick growth because the threading dislocations (TDs) converged to the center of each pit. Moreover, when the crystal surface after polishing was observed by photoluminescence measurement, peculiar floral designs reflecting the distribution of oxygen concentration were observed over the entire surface. In addition, the etch pits exhibited TDs in the center of each floral design. On the basis of our results, we proposed that the 3D-OVPE-GaN will serve as a key material for improving the performance of vertical GaN devices.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.35848/1347-4065/ac1d2f</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0001-7536-4683</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Japanese Journal of Applied Physics, 2021-09, Vol.60 (9), p.95501 |
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| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Crystal dislocations Crystal growth Crystal surfaces Crystals Dislocation density Epitaxial growth Etch pits GaN growth mode control low dislocation density low resistance Photoluminescence power device Threading dislocations Vapor phase epitaxy Vapor phases vertical device |
| title | Floral design GaN crystals: low-resistive and low-dislocation-density growth by oxide vapor phase epitaxy |
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