Disorder effects in topological insulator nanowires
Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration N ∼ 1019 cm−3 of Coulomb impurities. It is believed that a MBS device can fu...
Gespeichert in:
| Veröffentlicht in: | Physical review. B 2021-08, Vol.104 (5), p.1, Article 054205 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 5 |
| container_start_page | 1 |
| container_title | Physical review. B |
| container_volume | 104 |
| creator | Huang, Yi Shklovskii, B. I. |
| description | Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration N ∼ 1019 cm−3 of Coulomb impurities. It is believed that a MBS device can function only if the amplitude of long-range fluctuations of the random Coulomb potential Γ is smaller than the subband gap Δ. Here we calculate Γ for recently experimentally studied large-dielectric-constant (Bi1−x Sbx)2 Te3 wires in a small-dielectric-constant environment (no superconductor). We show that provided by such a dielectric-constant contrast, the confinement of electric field of impurities within the wire allows more distant impurities to contribute into Γ , leading to Γ ∼ 3 Δ . We also calculate a TI wire resistance as a function of the Fermi level and carrier concentration due to scattering on Coulomb and neutral impurities and do not find observable discrete subband-spectrum-related oscillations at N ≳ 1018 cm−3 . |
| doi_str_mv | 10.1103/PhysRevB.104.054205 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2568703747</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2568703747</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-ab47310dc0a0a15fd3d2ec0ed3d25b699043d5bfda94ef626f26c84aa1952b6f3</originalsourceid><addsrcrecordid>eNo9kEtLxDAUhYMoONT5BW4Krltvnp0sddRRGFBE1yHNQzvUpiatMv_eDlVX59zD4R74EDrHUGIM9PLpfZ-e3dd1iYGVwBkBfoQWhAlZSCnk8b_ncIqWKe0AAAuQFcgFojdNCtG6mDvvnRlS3nT5EPrQhrfG6HY609jqIcS80134bqJLZ-jE6za55a9m6PXu9mV9X2wfNw_rq21hKKmGQtesohisAQ0ac2-pJc6AOyivhZTAqOW1t1oy5wURngizYlpjyUktPM3Qxfy3j-FzdGlQuzDGbppUhItVBbSaFjJE55aJIaXovOpj86HjXmFQB0DqD9AUMDUDoj84Y1rr</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2568703747</pqid></control><display><type>article</type><title>Disorder effects in topological insulator nanowires</title><source>American Physical Society Journals</source><creator>Huang, Yi ; Shklovskii, B. I.</creator><creatorcontrib>Huang, Yi ; Shklovskii, B. I.</creatorcontrib><description>Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration N ∼ 1019 cm−3 of Coulomb impurities. It is believed that a MBS device can function only if the amplitude of long-range fluctuations of the random Coulomb potential Γ is smaller than the subband gap Δ. Here we calculate Γ for recently experimentally studied large-dielectric-constant (Bi1−x Sbx)2 Te3 wires in a small-dielectric-constant environment (no superconductor). We show that provided by such a dielectric-constant contrast, the confinement of electric field of impurities within the wire allows more distant impurities to contribute into Γ , leading to Γ ∼ 3 Δ . We also calculate a TI wire resistance as a function of the Fermi level and carrier concentration due to scattering on Coulomb and neutral impurities and do not find observable discrete subband-spectrum-related oscillations at N ≳ 1018 cm−3 .</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.104.054205</identifier><language>eng</language><publisher>College Park: American Physical Society</publisher><subject>Carrier density ; Coulomb potential ; Electric fields ; Impurities ; Mathematical analysis ; Nanowires ; Permittivity ; Topological insulators</subject><ispartof>Physical review. B, 2021-08, Vol.104 (5), p.1, Article 054205</ispartof><rights>Copyright American Physical Society Aug 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-ab47310dc0a0a15fd3d2ec0ed3d25b699043d5bfda94ef626f26c84aa1952b6f3</citedby><cites>FETCH-LOGICAL-c327t-ab47310dc0a0a15fd3d2ec0ed3d25b699043d5bfda94ef626f26c84aa1952b6f3</cites><orcidid>0000-0001-5702-0705</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,2863,2864,27901,27902</link.rule.ids></links><search><creatorcontrib>Huang, Yi</creatorcontrib><creatorcontrib>Shklovskii, B. I.</creatorcontrib><title>Disorder effects in topological insulator nanowires</title><title>Physical review. B</title><description>Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration N ∼ 1019 cm−3 of Coulomb impurities. It is believed that a MBS device can function only if the amplitude of long-range fluctuations of the random Coulomb potential Γ is smaller than the subband gap Δ. Here we calculate Γ for recently experimentally studied large-dielectric-constant (Bi1−x Sbx)2 Te3 wires in a small-dielectric-constant environment (no superconductor). We show that provided by such a dielectric-constant contrast, the confinement of electric field of impurities within the wire allows more distant impurities to contribute into Γ , leading to Γ ∼ 3 Δ . We also calculate a TI wire resistance as a function of the Fermi level and carrier concentration due to scattering on Coulomb and neutral impurities and do not find observable discrete subband-spectrum-related oscillations at N ≳ 1018 cm−3 .</description><subject>Carrier density</subject><subject>Coulomb potential</subject><subject>Electric fields</subject><subject>Impurities</subject><subject>Mathematical analysis</subject><subject>Nanowires</subject><subject>Permittivity</subject><subject>Topological insulators</subject><issn>2469-9950</issn><issn>2469-9969</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLxDAUhYMoONT5BW4Krltvnp0sddRRGFBE1yHNQzvUpiatMv_eDlVX59zD4R74EDrHUGIM9PLpfZ-e3dd1iYGVwBkBfoQWhAlZSCnk8b_ncIqWKe0AAAuQFcgFojdNCtG6mDvvnRlS3nT5EPrQhrfG6HY609jqIcS80134bqJLZ-jE6za55a9m6PXu9mV9X2wfNw_rq21hKKmGQtesohisAQ0ac2-pJc6AOyivhZTAqOW1t1oy5wURngizYlpjyUktPM3Qxfy3j-FzdGlQuzDGbppUhItVBbSaFjJE55aJIaXovOpj86HjXmFQB0DqD9AUMDUDoj84Y1rr</recordid><startdate>20210801</startdate><enddate>20210801</enddate><creator>Huang, Yi</creator><creator>Shklovskii, B. I.</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5702-0705</orcidid></search><sort><creationdate>20210801</creationdate><title>Disorder effects in topological insulator nanowires</title><author>Huang, Yi ; Shklovskii, B. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-ab47310dc0a0a15fd3d2ec0ed3d25b699043d5bfda94ef626f26c84aa1952b6f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Carrier density</topic><topic>Coulomb potential</topic><topic>Electric fields</topic><topic>Impurities</topic><topic>Mathematical analysis</topic><topic>Nanowires</topic><topic>Permittivity</topic><topic>Topological insulators</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Yi</creatorcontrib><creatorcontrib>Shklovskii, B. I.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical review. B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Yi</au><au>Shklovskii, B. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Disorder effects in topological insulator nanowires</atitle><jtitle>Physical review. B</jtitle><date>2021-08-01</date><risdate>2021</risdate><volume>104</volume><issue>5</issue><spage>1</spage><pages>1-</pages><artnum>054205</artnum><issn>2469-9950</issn><eissn>2469-9969</eissn><abstract>Three-dimensional topological insulator (TI) nanowires with quantized surface subband spectra are studied as a main component of Majorana bound states (MBS) devices. However, such wires are known to have large concentration N ∼ 1019 cm−3 of Coulomb impurities. It is believed that a MBS device can function only if the amplitude of long-range fluctuations of the random Coulomb potential Γ is smaller than the subband gap Δ. Here we calculate Γ for recently experimentally studied large-dielectric-constant (Bi1−x Sbx)2 Te3 wires in a small-dielectric-constant environment (no superconductor). We show that provided by such a dielectric-constant contrast, the confinement of electric field of impurities within the wire allows more distant impurities to contribute into Γ , leading to Γ ∼ 3 Δ . We also calculate a TI wire resistance as a function of the Fermi level and carrier concentration due to scattering on Coulomb and neutral impurities and do not find observable discrete subband-spectrum-related oscillations at N ≳ 1018 cm−3 .</abstract><cop>College Park</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.104.054205</doi><orcidid>https://orcid.org/0000-0001-5702-0705</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2469-9950 |
| ispartof | Physical review. B, 2021-08, Vol.104 (5), p.1, Article 054205 |
| issn | 2469-9950 2469-9969 |
| language | eng |
| recordid | cdi_proquest_journals_2568703747 |
| source | American Physical Society Journals |
| subjects | Carrier density Coulomb potential Electric fields Impurities Mathematical analysis Nanowires Permittivity Topological insulators |
| title | Disorder effects in topological insulator nanowires |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T19%3A30%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Disorder%20effects%20in%20topological%20insulator%20nanowires&rft.jtitle=Physical%20review.%20B&rft.au=Huang,%20Yi&rft.date=2021-08-01&rft.volume=104&rft.issue=5&rft.spage=1&rft.pages=1-&rft.artnum=054205&rft.issn=2469-9950&rft.eissn=2469-9969&rft_id=info:doi/10.1103/PhysRevB.104.054205&rft_dat=%3Cproquest_cross%3E2568703747%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2568703747&rft_id=info:pmid/&rfr_iscdi=true |