Influence of the substrate temperature on the jet diamond depositon

The gas-jet diamond deposition with the activation of H2 + CH4 mixture by microwave discharge has been implemented. The maximum crystal size was observed at the substrate temperature of 850°C. The dependence of a film structure on the substrate temperature has been established. Diamond coating was r...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of physics. Conference series 2019-11, Vol.1359 (1), p.12109
Hauptverfasser:	Rebrov, A K, Timoshenko, N I, Emelyanov, A A, Yudin, I B
Format:	Artikel
Sprache:	eng
Schlagworte:	Diamond films Gas jets Microwave discharge Physics Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The gas-jet diamond deposition with the activation of H2 + CH4 mixture by microwave discharge has been implemented. The maximum crystal size was observed at the substrate temperature of 850°C. The dependence of a film structure on the substrate temperature has been established. Diamond coating was received at a low substrate temperature (524°C).
ISSN:	1742-6588 1742-6596
DOI:	10.1088/1742-6596/1359/1/012109