Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching
The microfabrication technique based on synchrotron radiation (SR) direct etching process has recently been applied to construct PTFE microstructures. This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structur...
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Veröffentlicht in: | IEICE Transactions on Electronics 2021/09/01, Vol.E104.C(9), pp.446-454 |
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container_title | IEICE Transactions on Electronics |
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creator | KISHIHARA, Mitsuyoshi TAKEUCHI, Masaya YAMAGUCHI, Akinobu UTSUMI, Yuichi OHTA, Isao |
description | The microfabrication technique based on synchrotron radiation (SR) direct etching process has recently been applied to construct PTFE microstructures. This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structural strength. A rectangular through-hole is introduced taking the advantage of the SR direct etching process. First, a PTFE SIW for the Q-band is designed. Then, a cruciform 3-dB directional coupler consisting of the PTFE SIW is designed and fabricated by the SR direct etching process. The validity of the PTFE SIW coupler is confirmed by measuring the frequency characteristics of the S-parameters. The mechanical strength of the PTFE SIW and the peeling strength of its Au film are also additionally investigated. |
doi_str_mv | 10.1587/transele.2020ECP5043 |
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This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structural strength. A rectangular through-hole is introduced taking the advantage of the SR direct etching process. First, a PTFE SIW for the Q-band is designed. Then, a cruciform 3-dB directional coupler consisting of the PTFE SIW is designed and fabricated by the SR direct etching process. The validity of the PTFE SIW coupler is confirmed by measuring the frequency characteristics of the S-parameters. The mechanical strength of the PTFE SIW and the peeling strength of its Au film are also additionally investigated.</description><identifier>ISSN: 0916-8524</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.2020ECP5043</identifier><language>eng</language><publisher>Tokyo: The Institute of Electronics, Information and Communication Engineers</publisher><subject>couplers ; dielectric loaded waveguides ; Directional couplers ; Etching ; microstructure ; millimeter wave circuits ; Polytetrafluoroethylene ; Structural strength ; Substrate integrated waveguides ; Synchrotron radiation ; Synchrotrons ; X-ray lithography</subject><ispartof>IEICE Transactions on Electronics, 2021/09/01, Vol.E104.C(9), pp.446-454</ispartof><rights>2021 The Institute of Electronics, Information and Communication Engineers</rights><rights>Copyright Japan Science and Technology Agency 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c497t-4e471e1e6f3c180e3262ae73b52df290fd57b9062962b7f1ecc60ac46828eecb3</citedby><cites>FETCH-LOGICAL-c497t-4e471e1e6f3c180e3262ae73b52df290fd57b9062962b7f1ecc60ac46828eecb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,1881,27923,27924</link.rule.ids></links><search><creatorcontrib>KISHIHARA, Mitsuyoshi</creatorcontrib><creatorcontrib>TAKEUCHI, Masaya</creatorcontrib><creatorcontrib>YAMAGUCHI, Akinobu</creatorcontrib><creatorcontrib>UTSUMI, Yuichi</creatorcontrib><creatorcontrib>OHTA, Isao</creatorcontrib><title>Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching</title><title>IEICE Transactions on Electronics</title><addtitle>IEICE Trans. Electron.</addtitle><description>The microfabrication technique based on synchrotron radiation (SR) direct etching process has recently been applied to construct PTFE microstructures. This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structural strength. A rectangular through-hole is introduced taking the advantage of the SR direct etching process. First, a PTFE SIW for the Q-band is designed. Then, a cruciform 3-dB directional coupler consisting of the PTFE SIW is designed and fabricated by the SR direct etching process. The validity of the PTFE SIW coupler is confirmed by measuring the frequency characteristics of the S-parameters. The mechanical strength of the PTFE SIW and the peeling strength of its Au film are also additionally investigated.</description><subject>couplers</subject><subject>dielectric loaded waveguides</subject><subject>Directional couplers</subject><subject>Etching</subject><subject>microstructure</subject><subject>millimeter wave circuits</subject><subject>Polytetrafluoroethylene</subject><subject>Structural strength</subject><subject>Substrate integrated waveguides</subject><subject>Synchrotron radiation</subject><subject>Synchrotrons</subject><subject>X-ray lithography</subject><issn>0916-8524</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpNkEtLw0AUhQdRsFb_gYsB16nzzGMpaaqFgqWtCG6GyeQmTalJnZkI_fem1Jau7ll837lwEHqkZERlHD17qxsHWxgxwkiWziUR_AoNaCRkQLnk12hAEhoGsWTiFt05tyGExozyAfoag6urBuumwBOd29poX7cNbks8X00yvOxy19d7wNPGQ3VIBf7Uv1B1dQE4bbvdFizO93i5wOPagvE482ZdN9U9uin11sHD_x2ij0m2St-C2fvrNH2ZBUYkkQ8EiIgChbDkhsYEOAuZhojnkhUlS0hZyChPSMiSkOVRScGYkGgjwpjFACbnQ_R07N3Z9qcD59Wm7WzTv1RMhjEnUsayp8SRMrZ1zkKpdrb-1navKFGHFdVpRXWxYq8tjtrGeV3BWdLW16Znz1JGiVCpSk7houQMm7W2Chr-B0MzhEE</recordid><startdate>20210901</startdate><enddate>20210901</enddate><creator>KISHIHARA, Mitsuyoshi</creator><creator>TAKEUCHI, Masaya</creator><creator>YAMAGUCHI, Akinobu</creator><creator>UTSUMI, Yuichi</creator><creator>OHTA, Isao</creator><general>The Institute of Electronics, Information and Communication Engineers</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20210901</creationdate><title>Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching</title><author>KISHIHARA, Mitsuyoshi ; TAKEUCHI, Masaya ; YAMAGUCHI, Akinobu ; UTSUMI, Yuichi ; OHTA, Isao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c497t-4e471e1e6f3c180e3262ae73b52df290fd57b9062962b7f1ecc60ac46828eecb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>couplers</topic><topic>dielectric loaded waveguides</topic><topic>Directional couplers</topic><topic>Etching</topic><topic>microstructure</topic><topic>millimeter wave circuits</topic><topic>Polytetrafluoroethylene</topic><topic>Structural strength</topic><topic>Substrate integrated waveguides</topic><topic>Synchrotron radiation</topic><topic>Synchrotrons</topic><topic>X-ray lithography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KISHIHARA, Mitsuyoshi</creatorcontrib><creatorcontrib>TAKEUCHI, Masaya</creatorcontrib><creatorcontrib>YAMAGUCHI, Akinobu</creatorcontrib><creatorcontrib>UTSUMI, Yuichi</creatorcontrib><creatorcontrib>OHTA, Isao</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KISHIHARA, Mitsuyoshi</au><au>TAKEUCHI, Masaya</au><au>YAMAGUCHI, Akinobu</au><au>UTSUMI, Yuichi</au><au>OHTA, Isao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2021-09-01</date><risdate>2021</risdate><volume>E104.C</volume><issue>9</issue><spage>446</spage><epage>454</epage><pages>446-454</pages><artnum>2020ECP5043</artnum><issn>0916-8524</issn><eissn>1745-1353</eissn><abstract>The microfabrication technique based on synchrotron radiation (SR) direct etching process has recently been applied to construct PTFE microstructures. This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structural strength. A rectangular through-hole is introduced taking the advantage of the SR direct etching process. First, a PTFE SIW for the Q-band is designed. Then, a cruciform 3-dB directional coupler consisting of the PTFE SIW is designed and fabricated by the SR direct etching process. The validity of the PTFE SIW coupler is confirmed by measuring the frequency characteristics of the S-parameters. 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subjects | couplers dielectric loaded waveguides Directional couplers Etching microstructure millimeter wave circuits Polytetrafluoroethylene Structural strength Substrate integrated waveguides Synchrotron radiation Synchrotrons X-ray lithography |
title | Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching |
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