Effect of growth technological conditions on the heterointerface thickness in the InAs/GaSb strained-layer superlattices grown by MOCVD

In this article, we investigated the effect of technological growth parameters by metal-organic chemical vapor deposition (MOCVD) method on the thickness of the transition layers, which affect the value of tensile strain in the structure, in the InAs/GaSb superlattice. We consider that the thickness...

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