Low Dark Current and High Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors, monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth and contact metallization in a 300-mm CMOS pilot line. The photodetectors are implemented using the nano-ridge engineering con...

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Veröffentlicht in:	Journal of lightwave technology 2021-08, Vol.39 (16), p.5263-5269
Hauptverfasser:	Ozdemir, Cenk Ibrahim, De Koninck, Yannick, Yudistira, Didit, Kuznetsova, Nadezda, Baryshnikova, Marina, Van Thourhout, Dries, Kunert, Bernardette, Pantouvaki, Marianna, Van Campenhout, Joris
Format:	Artikel
Sprache:	eng
Schlagworte:	Aspect ratio CMOS Dark current Epitaxial growth Gallium arsenide III-V semiconductor materials Indium gallium arsenides Metallizing monolithic integration Multi Quantum Wells nano-ridge engineering optical simulation Optical waveguides Photodetectors Photometers Photonics Plugs quantum well devices Quantum wells semiconductor waveguides Silicon silicon photonics Waveguides
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