Ion-beam modification of metastable gallium oxide polymorphs
•Structural changes revealed in α + ε(κ)-phase Ga2O3 under Al+ ion irradiation.•Interpretation of new X-ray diffraction peaks after irradiation is twofold.•Either phase transition or strain can be ion-induced in metastable Ga2O3. Structural changes under the action of Al+ irradiation have been inves...
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| Veröffentlicht in: | Materials letters 2021-11, Vol.302, p.130346, Article 130346 |
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| creator | Tetelbaum, David Nikolskaya, Alena Korolev, Dmitry Mullagaliev, Timur Belov, Alexey Trushin, Vladimir Dudin, Yuri Nezhdanov, Alexey Mashin, Aleksandr Mikhaylov, Alexey Pechnikov, Alexey Scheglov, Michael Nikolaev, Vladimir Gogova, Daniela |
| description | •Structural changes revealed in α + ε(κ)-phase Ga2O3 under Al+ ion irradiation.•Interpretation of new X-ray diffraction peaks after irradiation is twofold.•Either phase transition or strain can be ion-induced in metastable Ga2O3.
Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of ε(κ)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways – either as a phase transition of the α- and/or ε(κ)-phase to the more stable β-phase, or as a selective radiation-stimulated strain of the ε(κ)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties. |
| doi_str_mv | 10.1016/j.matlet.2021.130346 |
| format | Article |
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Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of ε(κ)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways – either as a phase transition of the α- and/or ε(κ)-phase to the more stable β-phase, or as a selective radiation-stimulated strain of the ε(κ)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2021.130346</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Beta phase ; Epitaxial growth ; Gallium oxide ; Gallium oxides ; Inclusions ; Ion beams ; Ion implantation ; Ion irradiation ; Irradiation ; Materials science ; Metastable phases ; Phase transformations ; Phase transitions ; Radiation-stimulated strain ; Sapphire ; Vapor phase epitaxy ; Vapor phases</subject><ispartof>Materials letters, 2021-11, Vol.302, p.130346, Article 130346</ispartof><rights>2021 Elsevier B.V.</rights><rights>Copyright Elsevier BV Nov 1, 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c400t-224022547748730727a994aa8cd748ab08038c71f8e35d96ce0beaf535fc2ee53</citedby><cites>FETCH-LOGICAL-c400t-224022547748730727a994aa8cd748ab08038c71f8e35d96ce0beaf535fc2ee53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X21010430$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids></links><search><creatorcontrib>Tetelbaum, David</creatorcontrib><creatorcontrib>Nikolskaya, Alena</creatorcontrib><creatorcontrib>Korolev, Dmitry</creatorcontrib><creatorcontrib>Mullagaliev, Timur</creatorcontrib><creatorcontrib>Belov, Alexey</creatorcontrib><creatorcontrib>Trushin, Vladimir</creatorcontrib><creatorcontrib>Dudin, Yuri</creatorcontrib><creatorcontrib>Nezhdanov, Alexey</creatorcontrib><creatorcontrib>Mashin, Aleksandr</creatorcontrib><creatorcontrib>Mikhaylov, Alexey</creatorcontrib><creatorcontrib>Pechnikov, Alexey</creatorcontrib><creatorcontrib>Scheglov, Michael</creatorcontrib><creatorcontrib>Nikolaev, Vladimir</creatorcontrib><creatorcontrib>Gogova, Daniela</creatorcontrib><title>Ion-beam modification of metastable gallium oxide polymorphs</title><title>Materials letters</title><description>•Structural changes revealed in α + ε(κ)-phase Ga2O3 under Al+ ion irradiation.•Interpretation of new X-ray diffraction peaks after irradiation is twofold.•Either phase transition or strain can be ion-induced in metastable Ga2O3.
Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of ε(κ)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways – either as a phase transition of the α- and/or ε(κ)-phase to the more stable β-phase, or as a selective radiation-stimulated strain of the ε(κ)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.</description><subject>Beta phase</subject><subject>Epitaxial growth</subject><subject>Gallium oxide</subject><subject>Gallium oxides</subject><subject>Inclusions</subject><subject>Ion beams</subject><subject>Ion implantation</subject><subject>Ion irradiation</subject><subject>Irradiation</subject><subject>Materials science</subject><subject>Metastable phases</subject><subject>Phase transformations</subject><subject>Phase transitions</subject><subject>Radiation-stimulated strain</subject><subject>Sapphire</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phases</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMouK7-Aw8Fz62TNG1aEEEWVxcWvCh4C9l0qiltU5OsuP_eLPXsaWB4782bj5BrChkFWt522aBCjyFjwGhGc8h5eUIWtBJ5ymtRn5JFlIm0EOL9nFx43wEAr4EvyN3GjukO1ZAMtjGt0SoYOya2TQYMyge16zH5UH1v9kNif0yDyWT7w2Dd9OkvyVmreo9Xf3NJ3taPr6vndPvytFk9bFPNAULKGAfGCi4Ej41AMKHqmitV6SZu1A4qyCstaFthXjR1qRFio7bIi1YzxCJfkps5d3L2a48-yM7u3RhPSlaU0U15yaOKzyrtrPcOWzk5Myh3kBTkkZPs5MxJHjnJmVO03c82jB98G3TSa4OjxsY41EE21vwf8AtjZnH2</recordid><startdate>20211101</startdate><enddate>20211101</enddate><creator>Tetelbaum, David</creator><creator>Nikolskaya, Alena</creator><creator>Korolev, Dmitry</creator><creator>Mullagaliev, Timur</creator><creator>Belov, Alexey</creator><creator>Trushin, Vladimir</creator><creator>Dudin, Yuri</creator><creator>Nezhdanov, Alexey</creator><creator>Mashin, Aleksandr</creator><creator>Mikhaylov, Alexey</creator><creator>Pechnikov, Alexey</creator><creator>Scheglov, Michael</creator><creator>Nikolaev, Vladimir</creator><creator>Gogova, Daniela</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20211101</creationdate><title>Ion-beam modification of metastable gallium oxide polymorphs</title><author>Tetelbaum, David ; Nikolskaya, Alena ; Korolev, Dmitry ; Mullagaliev, Timur ; Belov, Alexey ; Trushin, Vladimir ; Dudin, Yuri ; Nezhdanov, Alexey ; Mashin, Aleksandr ; Mikhaylov, Alexey ; Pechnikov, Alexey ; Scheglov, Michael ; Nikolaev, Vladimir ; Gogova, Daniela</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c400t-224022547748730727a994aa8cd748ab08038c71f8e35d96ce0beaf535fc2ee53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Beta phase</topic><topic>Epitaxial growth</topic><topic>Gallium oxide</topic><topic>Gallium oxides</topic><topic>Inclusions</topic><topic>Ion beams</topic><topic>Ion implantation</topic><topic>Ion irradiation</topic><topic>Irradiation</topic><topic>Materials science</topic><topic>Metastable phases</topic><topic>Phase transformations</topic><topic>Phase transitions</topic><topic>Radiation-stimulated strain</topic><topic>Sapphire</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phases</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tetelbaum, David</creatorcontrib><creatorcontrib>Nikolskaya, Alena</creatorcontrib><creatorcontrib>Korolev, Dmitry</creatorcontrib><creatorcontrib>Mullagaliev, Timur</creatorcontrib><creatorcontrib>Belov, Alexey</creatorcontrib><creatorcontrib>Trushin, Vladimir</creatorcontrib><creatorcontrib>Dudin, Yuri</creatorcontrib><creatorcontrib>Nezhdanov, Alexey</creatorcontrib><creatorcontrib>Mashin, Aleksandr</creatorcontrib><creatorcontrib>Mikhaylov, Alexey</creatorcontrib><creatorcontrib>Pechnikov, Alexey</creatorcontrib><creatorcontrib>Scheglov, Michael</creatorcontrib><creatorcontrib>Nikolaev, Vladimir</creatorcontrib><creatorcontrib>Gogova, Daniela</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tetelbaum, David</au><au>Nikolskaya, Alena</au><au>Korolev, Dmitry</au><au>Mullagaliev, Timur</au><au>Belov, Alexey</au><au>Trushin, Vladimir</au><au>Dudin, Yuri</au><au>Nezhdanov, Alexey</au><au>Mashin, Aleksandr</au><au>Mikhaylov, Alexey</au><au>Pechnikov, Alexey</au><au>Scheglov, Michael</au><au>Nikolaev, Vladimir</au><au>Gogova, Daniela</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ion-beam modification of metastable gallium oxide polymorphs</atitle><jtitle>Materials letters</jtitle><date>2021-11-01</date><risdate>2021</risdate><volume>302</volume><spage>130346</spage><pages>130346-</pages><artnum>130346</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>•Structural changes revealed in α + ε(κ)-phase Ga2O3 under Al+ ion irradiation.•Interpretation of new X-ray diffraction peaks after irradiation is twofold.•Either phase transition or strain can be ion-induced in metastable Ga2O3.
Structural changes under the action of Al+ irradiation have been investigated by X-ray diffraction for polymorphic Ga2O3 layers grown by halide vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of ε(κ)-phase. As a result of irradiation, some new reflections appear, which can be interpreted in two ways – either as a phase transition of the α- and/or ε(κ)-phase to the more stable β-phase, or as a selective radiation-stimulated strain of the ε(κ)-phase, i.e., an increase in the interplanar distance of a family of planes parallel to the surface. The discussed ion-stimulated phenomena have to be taken into account when utilizing ion implantation to modify Ga2O3 properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2021.130346</doi></addata></record> |
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| subjects | Beta phase Epitaxial growth Gallium oxide Gallium oxides Inclusions Ion beams Ion implantation Ion irradiation Irradiation Materials science Metastable phases Phase transformations Phase transitions Radiation-stimulated strain Sapphire Vapor phase epitaxy Vapor phases |
| title | Ion-beam modification of metastable gallium oxide polymorphs |
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