Feasibility of Using Chromium as a Switching Material for CrSi2
The feasibility of using layers of metallic chromium as a switching material for a medium-temperature thermoelectric CrSi 2 is investigated. The CrSi 2 /Cr samples are synthesized by the hot pressing of a fine electrolytic chromium powder with single-crystal and polycrystalline chromium disilicide,...
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| Veröffentlicht in: | Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2021-07, Vol.15 (4), p.678-682 |
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| container_title | Surface investigation, x-ray, synchrotron and neutron techniques |
| container_volume | 15 |
| creator | Solomkin, F. Yu Samunin, A. Yu Zaitseva, N. V. Sharenkova, N. V. Isachenko, G. N. Samusevich, K. L. Klechkovskaya, V. V. Orekhov, A. S. Rakova, E. V. Drozdova, E. V. |
| description | The feasibility of using layers of metallic chromium as a switching material for a medium-temperature thermoelectric CrSi
2
is investigated. The CrSi
2
/Cr samples are synthesized by the hot pressing of a fine electrolytic chromium powder with single-crystal and polycrystalline chromium disilicide, followed by high-temperature annealing. X-ray phase analysis, scanning electron microscopy, energy X-ray dispersive spectroscopy and electron backscatter diffraction showed that no secondary phases are formed both in the bulk of the thermoelectric material and at the CrSi
2
–Cr interface. Therefore, Cr can be recommended as a switching material. |
| doi_str_mv | 10.1134/S1027451021040182 |
| format | Article |
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2
is investigated. The CrSi
2
/Cr samples are synthesized by the hot pressing of a fine electrolytic chromium powder with single-crystal and polycrystalline chromium disilicide, followed by high-temperature annealing. X-ray phase analysis, scanning electron microscopy, energy X-ray dispersive spectroscopy and electron backscatter diffraction showed that no secondary phases are formed both in the bulk of the thermoelectric material and at the CrSi
2
–Cr interface. Therefore, Cr can be recommended as a switching material.</description><identifier>ISSN: 1027-4510</identifier><identifier>EISSN: 1819-7094</identifier><identifier>DOI: 10.1134/S1027451021040182</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Chemistry and Materials Science ; Chromium ; Electron backscatter diffraction ; Electrons ; Feasibility ; High temperature ; Hot pressing ; Materials Science ; Single crystals ; Surfaces and Interfaces ; Switching ; Thermoelectric materials ; Thermoelectricity ; Thin Films</subject><ispartof>Surface investigation, x-ray, synchrotron and neutron techniques, 2021-07, Vol.15 (4), p.678-682</ispartof><rights>Pleiades Publishing, Ltd. 2021. ISSN 1027-4510, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2021, Vol. 15, No. 4, pp. 678–682. © Pleiades Publishing, Ltd., 2021. Russian Text © The Author(s), 2021, published in Poverkhnost’, 2021, No. 7, pp. 38–42.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c198t-c5776000257c96c675ee2482087dac9002ac0c8e61f4595fa5f84cb194be99703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1027451021040182$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1027451021040182$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Solomkin, F. Yu</creatorcontrib><creatorcontrib>Samunin, A. Yu</creatorcontrib><creatorcontrib>Zaitseva, N. V.</creatorcontrib><creatorcontrib>Sharenkova, N. V.</creatorcontrib><creatorcontrib>Isachenko, G. N.</creatorcontrib><creatorcontrib>Samusevich, K. L.</creatorcontrib><creatorcontrib>Klechkovskaya, V. V.</creatorcontrib><creatorcontrib>Orekhov, A. S.</creatorcontrib><creatorcontrib>Rakova, E. V.</creatorcontrib><creatorcontrib>Drozdova, E. V.</creatorcontrib><title>Feasibility of Using Chromium as a Switching Material for CrSi2</title><title>Surface investigation, x-ray, synchrotron and neutron techniques</title><addtitle>J. Surf. Investig</addtitle><description>The feasibility of using layers of metallic chromium as a switching material for a medium-temperature thermoelectric CrSi
2
is investigated. The CrSi
2
/Cr samples are synthesized by the hot pressing of a fine electrolytic chromium powder with single-crystal and polycrystalline chromium disilicide, followed by high-temperature annealing. X-ray phase analysis, scanning electron microscopy, energy X-ray dispersive spectroscopy and electron backscatter diffraction showed that no secondary phases are formed both in the bulk of the thermoelectric material and at the CrSi
2
–Cr interface. Therefore, Cr can be recommended as a switching material.</description><subject>Chemistry and Materials Science</subject><subject>Chromium</subject><subject>Electron backscatter diffraction</subject><subject>Electrons</subject><subject>Feasibility</subject><subject>High temperature</subject><subject>Hot pressing</subject><subject>Materials Science</subject><subject>Single crystals</subject><subject>Surfaces and Interfaces</subject><subject>Switching</subject><subject>Thermoelectric materials</subject><subject>Thermoelectricity</subject><subject>Thin Films</subject><issn>1027-4510</issn><issn>1819-7094</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1UEtLAzEQDqJgrf4AbwHPqzPZPE8ii1Wh4qH2vKQxaVPabk22SP-9KRU8iJeZYb4XfIRcI9wi1vxugsAUF2UicEDNTsgANZpKgeGn5S5wdcDPyUXOSwChaiEH5H7kbY6zuIr9nnaBTnPczGmzSN067tbUZmrp5Cv2bnH4v9rep2hXNHSJNmkS2SU5C3aV_dXPHpLp6PG9ea7Gb08vzcO4cmh0XzmhlAQAJpQz0kklvGdcM9DqwzpTAOvAaS8xcGFEsCJo7mZo-Mwbo6Aekpuj7zZ1nzuf-3bZ7dKmRLZMSMlRiVoXFh5ZLnU5Jx_abYprm_YtQnvoqf3TU9GwoyYX7mbu06_z_6JvSuBm2A</recordid><startdate>20210701</startdate><enddate>20210701</enddate><creator>Solomkin, F. Yu</creator><creator>Samunin, A. Yu</creator><creator>Zaitseva, N. V.</creator><creator>Sharenkova, N. V.</creator><creator>Isachenko, G. N.</creator><creator>Samusevich, K. L.</creator><creator>Klechkovskaya, V. V.</creator><creator>Orekhov, A. S.</creator><creator>Rakova, E. V.</creator><creator>Drozdova, E. V.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20210701</creationdate><title>Feasibility of Using Chromium as a Switching Material for CrSi2</title><author>Solomkin, F. Yu ; Samunin, A. Yu ; Zaitseva, N. V. ; Sharenkova, N. V. ; Isachenko, G. N. ; Samusevich, K. L. ; Klechkovskaya, V. V. ; Orekhov, A. S. ; Rakova, E. V. ; Drozdova, E. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c198t-c5776000257c96c675ee2482087dac9002ac0c8e61f4595fa5f84cb194be99703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Chemistry and Materials Science</topic><topic>Chromium</topic><topic>Electron backscatter diffraction</topic><topic>Electrons</topic><topic>Feasibility</topic><topic>High temperature</topic><topic>Hot pressing</topic><topic>Materials Science</topic><topic>Single crystals</topic><topic>Surfaces and Interfaces</topic><topic>Switching</topic><topic>Thermoelectric materials</topic><topic>Thermoelectricity</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Solomkin, F. Yu</creatorcontrib><creatorcontrib>Samunin, A. Yu</creatorcontrib><creatorcontrib>Zaitseva, N. V.</creatorcontrib><creatorcontrib>Sharenkova, N. V.</creatorcontrib><creatorcontrib>Isachenko, G. N.</creatorcontrib><creatorcontrib>Samusevich, K. L.</creatorcontrib><creatorcontrib>Klechkovskaya, V. V.</creatorcontrib><creatorcontrib>Orekhov, A. S.</creatorcontrib><creatorcontrib>Rakova, E. V.</creatorcontrib><creatorcontrib>Drozdova, E. V.</creatorcontrib><collection>CrossRef</collection><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Solomkin, F. Yu</au><au>Samunin, A. Yu</au><au>Zaitseva, N. V.</au><au>Sharenkova, N. V.</au><au>Isachenko, G. N.</au><au>Samusevich, K. L.</au><au>Klechkovskaya, V. V.</au><au>Orekhov, A. S.</au><au>Rakova, E. V.</au><au>Drozdova, E. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Feasibility of Using Chromium as a Switching Material for CrSi2</atitle><jtitle>Surface investigation, x-ray, synchrotron and neutron techniques</jtitle><stitle>J. Surf. Investig</stitle><date>2021-07-01</date><risdate>2021</risdate><volume>15</volume><issue>4</issue><spage>678</spage><epage>682</epage><pages>678-682</pages><issn>1027-4510</issn><eissn>1819-7094</eissn><abstract>The feasibility of using layers of metallic chromium as a switching material for a medium-temperature thermoelectric CrSi
2
is investigated. The CrSi
2
/Cr samples are synthesized by the hot pressing of a fine electrolytic chromium powder with single-crystal and polycrystalline chromium disilicide, followed by high-temperature annealing. X-ray phase analysis, scanning electron microscopy, energy X-ray dispersive spectroscopy and electron backscatter diffraction showed that no secondary phases are formed both in the bulk of the thermoelectric material and at the CrSi
2
–Cr interface. Therefore, Cr can be recommended as a switching material.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1027451021040182</doi><tpages>5</tpages></addata></record> |
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| issn | 1027-4510 1819-7094 |
| language | eng |
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| source | SpringerNature Journals |
| subjects | Chemistry and Materials Science Chromium Electron backscatter diffraction Electrons Feasibility High temperature Hot pressing Materials Science Single crystals Surfaces and Interfaces Switching Thermoelectric materials Thermoelectricity Thin Films |
| title | Feasibility of Using Chromium as a Switching Material for CrSi2 |
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