Efficient FAPbI3–PbS quantum dot graphene-based phototransistors

The high mobility of charge carriers in graphene (G) together with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) has provided high-performance hybrids for the next generation of phototransistors. In order to get a higher quality film of PbS QDs, understanding...

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Veröffentlicht in:New journal of chemistry 2021-09, Vol.45 (34), p.15285-15293
Hauptverfasser: Samaneh Aynehband, Mohammadi, Maryam, Rana Poushimin, Nunzi, Jean-Michel, Simchi, Abdolreza
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container_end_page 15293
container_issue 34
container_start_page 15285
container_title New journal of chemistry
container_volume 45
creator Samaneh Aynehband
Mohammadi, Maryam
Rana Poushimin
Nunzi, Jean-Michel
Simchi, Abdolreza
description The high mobility of charge carriers in graphene (G) together with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) has provided high-performance hybrids for the next generation of phototransistors. In order to get a higher quality film of PbS QDs, understanding the effect of the ligand exchange method is critical. So, to improve the interdot electronic coupling, we propose a new conducting ligand to prepare a dense and self-assembled active layer of FAPbI3–PbS quantum dots on G/Si/SiO2 substrates. Quantum dot (QD) nanocrystalline films were prepared via two different procedures: liquid phase ligand exchange (LPE) and solid phase ligand exchange (SPE). SPE with formamidinium lead iodide significantly increases the packing density and surface coverage of the active layer on the graphene substrate. Efficient light absorption in the near IR region and reduced charge transport resistance in the QD film are demonstrated. The SPE fabricated graphene-based heterostructure phototransistors exhibit improved specific detectivity (by 34%) and ION/IOFF ratio (by 23%) as compared with LPE. Our findings pave a way to develop high-throughout graphene-based phototransistors based on FAPbI3-CQDs.
doi_str_mv 10.1039/d1nj03139b
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subjects Absorption spectra
Charge transport
Colloiding
Current carriers
Electromagnetic absorption
Equivalent circuits
Exchanging
Graphene
Heterostructures
Image resolution
Ligands
Liquid phases
Optical properties
Packing density
Phototransistors
Quantum dots
Self-assembly
Silicon dioxide
Silicon substrates
Solid phases
Wetting
White light
title Efficient FAPbI3–PbS quantum dot graphene-based phototransistors
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